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Title: Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy

Abstract

The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular (001) surface. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
Publication Date:
OSTI Identifier:
20216184
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 19; Other Information: PBD: 8 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; VAPOR PHASE EPITAXY; SURFACTANTS; BISMUTH; GROWTH; MICROSCOPY; EXPERIMENTAL DATA

Citation Formats

Jun, S. W., Fetzer, C. M., Lee, R. T., Shurtleff, J. K., and Stringfellow, G. B. Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy. United States: N. p., 2000. Web. doi:10.1063/1.126453.
Jun, S. W., Fetzer, C. M., Lee, R. T., Shurtleff, J. K., & Stringfellow, G. B. Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy. United States. doi:10.1063/1.126453.
Jun, S. W., Fetzer, C. M., Lee, R. T., Shurtleff, J. K., and Stringfellow, G. B. Mon . "Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy". United States. doi:10.1063/1.126453.
@article{osti_20216184,
title = {Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy},
author = {Jun, S. W. and Fetzer, C. M. and Lee, R. T. and Shurtleff, J. K. and Stringfellow, G. B.},
abstractNote = {The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular (001) surface. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126453},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}