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Title: Improvement of wet-oxidized Al{sub x}Ga{sub 1-x}As (x{approx}1) through the use of AlAs/GaAs digital alloys

Abstract

A comparison of the water vapor oxidation characteristics of AlAs, Al{sub 0.98}Ga{sub 0.02}As, and an Al{sub x}Ga{sub 1-x}As digital alloy was performed. The Al{sub x}Ga{sub 1-x}As digital alloy consists of periods of 49 monolayers of AlAs and 1 monolayer of GaAs and has an equivalent composition of x=0.98. Oxidation rates and the structural integrity of the three layers were compared. When oxidized in water vapor, the Al{sub x}Ga{sub 1-x}As digital alloy and the AlAs have similar oxidation rates, both of which are twice as fast as the Al{sub 0.98}Ga{sub 0.02}As layer. Post-oxidation annealing of these samples at 450 degree sign C showed severe delamination at the oxide/GaAs interface in the AlAs sample while the Al{sub x}Ga{sub 1-x}As digital alloy sample was not damaged. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Department of Electrical and Computer Engineering, and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
20216177
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 18; Other Information: PBD: 1 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; OXIDATION; WATER VAPOR; LAYERS; ANNEALING; MOLECULAR BEAM EPITAXY; EXPERIMENTAL DATA

Citation Formats

Pickrell, G. W., Epple, J. H., Chang, K. L., Hsieh, K. C., and Cheng, K. Y. Improvement of wet-oxidized Al{sub x}Ga{sub 1-x}As (x{approx}1) through the use of AlAs/GaAs digital alloys. United States: N. p., 2000. Web. doi:10.1063/1.126403.
Pickrell, G. W., Epple, J. H., Chang, K. L., Hsieh, K. C., & Cheng, K. Y. Improvement of wet-oxidized Al{sub x}Ga{sub 1-x}As (x{approx}1) through the use of AlAs/GaAs digital alloys. United States. doi:10.1063/1.126403.
Pickrell, G. W., Epple, J. H., Chang, K. L., Hsieh, K. C., and Cheng, K. Y. Mon . "Improvement of wet-oxidized Al{sub x}Ga{sub 1-x}As (x{approx}1) through the use of AlAs/GaAs digital alloys". United States. doi:10.1063/1.126403.
@article{osti_20216177,
title = {Improvement of wet-oxidized Al{sub x}Ga{sub 1-x}As (x{approx}1) through the use of AlAs/GaAs digital alloys},
author = {Pickrell, G. W. and Epple, J. H. and Chang, K. L. and Hsieh, K. C. and Cheng, K. Y.},
abstractNote = {A comparison of the water vapor oxidation characteristics of AlAs, Al{sub 0.98}Ga{sub 0.02}As, and an Al{sub x}Ga{sub 1-x}As digital alloy was performed. The Al{sub x}Ga{sub 1-x}As digital alloy consists of periods of 49 monolayers of AlAs and 1 monolayer of GaAs and has an equivalent composition of x=0.98. Oxidation rates and the structural integrity of the three layers were compared. When oxidized in water vapor, the Al{sub x}Ga{sub 1-x}As digital alloy and the AlAs have similar oxidation rates, both of which are twice as fast as the Al{sub 0.98}Ga{sub 0.02}As layer. Post-oxidation annealing of these samples at 450 degree sign C showed severe delamination at the oxide/GaAs interface in the AlAs sample while the Al{sub x}Ga{sub 1-x}As digital alloy sample was not damaged. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126403},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}