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Title: Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001)

Abstract

Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Aa epitaxial Gd{sub 2}O{sub 3} film grown on GaAs(001). The Gd-O bond length is determined to be 2.390{+-}0.013 Aa, which corresponds to a +0.063{+-}0.013 Aa increase or a +2.7%{+-}0.6% bond-length strain relative to the bond length in a bulk Gd{sub 2}O{sub 3} powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd{sub 2}O{sub 3} with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2];  [2];  [2]
  1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
Publication Date:
OSTI Identifier:
20216175
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 18; Other Information: PBD: 1 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GADOLINIUM OXIDES; EPITAXY; GALLIUM ARSENIDES; FINE STRUCTURE; BOND LENGTHS; STRAINS; X-RAY SPECTRA; NSLS; THIN FILMS; EXPERIMENTAL DATA

Citation Formats

Nelson, E. J., Woicik, J. C., Hong, M., Kwo, J., and Mannaerts, J. P. Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001). United States: N. p., 2000. Web. doi:10.1063/1.126397.
Nelson, E. J., Woicik, J. C., Hong, M., Kwo, J., & Mannaerts, J. P. Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001). United States. doi:10.1063/1.126397.
Nelson, E. J., Woicik, J. C., Hong, M., Kwo, J., and Mannaerts, J. P. Mon . "Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001)". United States. doi:10.1063/1.126397.
@article{osti_20216175,
title = {Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001)},
author = {Nelson, E. J. and Woicik, J. C. and Hong, M. and Kwo, J. and Mannaerts, J. P.},
abstractNote = {Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Aa epitaxial Gd{sub 2}O{sub 3} film grown on GaAs(001). The Gd-O bond length is determined to be 2.390{+-}0.013 Aa, which corresponds to a +0.063{+-}0.013 Aa increase or a +2.7%{+-}0.6% bond-length strain relative to the bond length in a bulk Gd{sub 2}O{sub 3} powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd{sub 2}O{sub 3} with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126397},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}