Large, nitrogen-induced increase of the electron effective mass in In{sub y}Ga{sub 1-y}N{sub x}As{sub 1-x}

Journal Article · Mon Apr 24 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126360· OSTI ID:20216000

Skierbiszewski, C ^[1]; Perlin, P ^[1]; Wisniewski, P ^[1]; Knap, W ^[1]; Suski, T ^[1]; Walukiewicz, W ^[2]; Shan, W ^[2]; Yu, K M ^[2]; Ager, J W ^[2]; Haller, E E ^[2]

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1. UNIPRESS, Polish Academy of Sciences, ul. Sokolowska 29, 01-142 Warsaw, (Poland)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 (United States)

A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m{sub 0} in In{sub 0.08}Ga{sub 0.92}As{sub 0.967}N{sub 0.033} with 6x10{sup 19} cm{sup -3} free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys. (c) 2000 American Institute of Physics.

• OSTI ID: 20216000
• Journal Information: Applied Physics Letters, Vol. 76, Issue 17; Other Information: PBD: 24 Apr 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EFFECTIVE MASS
INDIUM ARSENIDES
GALLIUM ARSENIDES
SODIUM ADDITIONS
ELECTRONIC STRUCTURE
CHEMICAL COMPOSITION
DISPERSION RELATIONS
EXPERIMENTAL DATA