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Title: Evidence of an oxygen recombination center in p{sup +}-n GaInNAs solar cells

Abstract

We have studied deep-level impurities in p{sup +}-n GaInNAs solar cells using deep-level transient spectroscopy (DLTS). These films were grown by atmospheric- and low-pressure metalorganic vapor-phase epitaxy. The base layer is doped with silicon, and the emitter layer is zinc doped. Two types of samples have been studied: samples were grown with and without the addition of oxygen impurity. Two electron traps were found in all samples. These are designated as: E1, at E{sub C}-0.23-E{sub C}-0.27 eV, E2 at E{sub C}-0.45 eV, and E2* at 0.77 eV. With the addition of oxygen impurity, DLTS showed additional traps designated as E3 (electron) at E{sub C}-0.59 eV and H3 (hole) at E{sub V}+0.59 eV. Using secondary ion mass spectroscopy, the oxygen concentration was found to be about 2-3x10{sup 19} and 1x10{sup 17} cm{sup -3} in two sets of samples. However, only samples containing oxygen contained the two near-midgap levels (E3 and H3). We present evidence that these levels are associated with the oxygen defect. As we change the dc bias voltage, the E3 trap disappears in unison with the appearance of the H3 trap. Furthermore, E3 and H3 trap levels have comparable capture cross sections. This oxygen-related trap is an effective recombinationmore » center. The measured Shockley-Hall-Read lifetime for this center is about 0.6 {mu}s. (c) 2000 American Institute of Physics.« less

Authors:
 [1];  [1];  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
20215999
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 17; Other Information: PBD: 24 Apr 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; GALLIUM ARSENIDE SOLAR CELLS; GALLIUM NITRIDES; INDIUM ARSENIDES; RECOMBINATION; OXYGEN; IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; THIN FILMS; VAPOR PHASE EPITAXY; ENERGY LEVELS; EXPERIMENTAL DATA; GALLIUM ARSENIDES

Citation Formats

Balcioglu, A, Ahrenkiel, R K, and Friedman, D J. Evidence of an oxygen recombination center in p{sup +}-n GaInNAs solar cells. United States: N. p., 2000. Web. doi:10.1063/1.126383.
Balcioglu, A, Ahrenkiel, R K, & Friedman, D J. Evidence of an oxygen recombination center in p{sup +}-n GaInNAs solar cells. United States. https://doi.org/10.1063/1.126383
Balcioglu, A, Ahrenkiel, R K, and Friedman, D J. Mon . "Evidence of an oxygen recombination center in p{sup +}-n GaInNAs solar cells". United States. https://doi.org/10.1063/1.126383.
@article{osti_20215999,
title = {Evidence of an oxygen recombination center in p{sup +}-n GaInNAs solar cells},
author = {Balcioglu, A and Ahrenkiel, R K and Friedman, D J},
abstractNote = {We have studied deep-level impurities in p{sup +}-n GaInNAs solar cells using deep-level transient spectroscopy (DLTS). These films were grown by atmospheric- and low-pressure metalorganic vapor-phase epitaxy. The base layer is doped with silicon, and the emitter layer is zinc doped. Two types of samples have been studied: samples were grown with and without the addition of oxygen impurity. Two electron traps were found in all samples. These are designated as: E1, at E{sub C}-0.23-E{sub C}-0.27 eV, E2 at E{sub C}-0.45 eV, and E2* at 0.77 eV. With the addition of oxygen impurity, DLTS showed additional traps designated as E3 (electron) at E{sub C}-0.59 eV and H3 (hole) at E{sub V}+0.59 eV. Using secondary ion mass spectroscopy, the oxygen concentration was found to be about 2-3x10{sup 19} and 1x10{sup 17} cm{sup -3} in two sets of samples. However, only samples containing oxygen contained the two near-midgap levels (E3 and H3). We present evidence that these levels are associated with the oxygen defect. As we change the dc bias voltage, the E3 trap disappears in unison with the appearance of the H3 trap. Furthermore, E3 and H3 trap levels have comparable capture cross sections. This oxygen-related trap is an effective recombination center. The measured Shockley-Hall-Read lifetime for this center is about 0.6 {mu}s. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126383},
url = {https://www.osti.gov/biblio/20215999}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 76,
place = {United States},
year = {2000},
month = {4}
}