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Title: Infrared photoluminescence and optical absorption characteristics in Ge-doped ZnSe crystals

Abstract

Intense infrared emission peaking at a wavelength of 1.35 {mu}m has been observed in Ge-doped ZnSe crystals at low temperatures. The emission was particularly strong in the crystals doped with Ge in Se atmosphere and was then rapidly quenched. The emission was accompanied by a characteristic additive absorption band centered around a wavelength of 500 nm, which showed a partial but distinct metastable change upon light irradiation. The excitation spectrum and the preparation conditions of the infrared emission corresponded to those of electron spin resonance signals, owing to isolated, trivalent Ge ions in ZnSe. The nature and the possible applications of the emission are discussed. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1]
  1. Tokyo Engineering University, 1404-1 Katakura, Hachioji, Tokyo 192-0982, (Japan)
Publication Date:
OSTI Identifier:
20215995
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 16; Other Information: PBD: 17 Apr 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; JUNCTION TRANSISTORS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; GALLIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; BREAKDOWN; GRADED BAND GAPS; EXPERIMENTAL DATA

Citation Formats

Mita, Yoh, Akami, Masayuki, and Maruyama, Susumu. Infrared photoluminescence and optical absorption characteristics in Ge-doped ZnSe crystals. United States: N. p., 2000. Web. doi:10.1063/1.126303.
Mita, Yoh, Akami, Masayuki, & Maruyama, Susumu. Infrared photoluminescence and optical absorption characteristics in Ge-doped ZnSe crystals. United States. https://doi.org/10.1063/1.126303
Mita, Yoh, Akami, Masayuki, and Maruyama, Susumu. Mon . "Infrared photoluminescence and optical absorption characteristics in Ge-doped ZnSe crystals". United States. https://doi.org/10.1063/1.126303.
@article{osti_20215995,
title = {Infrared photoluminescence and optical absorption characteristics in Ge-doped ZnSe crystals},
author = {Mita, Yoh and Akami, Masayuki and Maruyama, Susumu},
abstractNote = {Intense infrared emission peaking at a wavelength of 1.35 {mu}m has been observed in Ge-doped ZnSe crystals at low temperatures. The emission was particularly strong in the crystals doped with Ge in Se atmosphere and was then rapidly quenched. The emission was accompanied by a characteristic additive absorption band centered around a wavelength of 500 nm, which showed a partial but distinct metastable change upon light irradiation. The excitation spectrum and the preparation conditions of the infrared emission corresponded to those of electron spin resonance signals, owing to isolated, trivalent Ge ions in ZnSe. The nature and the possible applications of the emission are discussed. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126303},
url = {https://www.osti.gov/biblio/20215995}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 76,
place = {United States},
year = {2000},
month = {4}
}