skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy

Abstract

The evolution of GaAs{sub 1-x}N{sub x} band structure at low nitrogen concentrations (up to x=0.021) is studied by ballistic electron emission microscopy (BEEM) spectra of Au/GaAs{sub 1-x}N{sub x} heterostructures. Two peaks observed in the second derivative BEEM spectra are identified with the contribution from the {gamma}- and L-like bands of GaAs{sub 1-x}N{sub x}. As the nitrogen concentration increases, the energetic separation between these peaks increases, with a relative decrease of the L-like band contribution to the BEEM current. In addition, we found a strong decrease of the Au/GaAs{sub 1-x}N{sub x} Schottky barrier with the nitrogen incorporation, from {approx}0.92 eV at x=0 down to {approx}0.55 eV at x=0.021. The observed Schottky barrier reduction approximates the GaAs{sub 1-x}N{sub x} band-gap reduction. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3];  [3]
  1. Division of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States)
  2. Electrical and Computer Engineering Department, University of California at San Diego, La Jolla, California 92093 (United States)
  3. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
20215768
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 12; Other Information: PBD: 15 Mar 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GALLIUM NITRIDES; SCHOTTKY EFFECT; ELECTRON EMISSION; ELECTRON SPECTROSCOPY; ENERGY GAP; ELECTRONIC STRUCTURE; SEMICONDUCTOR JUNCTIONS; GOLD; EXPERIMENTAL DATA

Citation Formats

Kozhevnikov, M, Narayanamurti, V, Reddy, C V, Xin, H P, Tu, C W, Mascarenhas, A, and Zhang, Y. Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.R7861.
Kozhevnikov, M, Narayanamurti, V, Reddy, C V, Xin, H P, Tu, C W, Mascarenhas, A, & Zhang, Y. Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy. United States. doi:10.1103/PhysRevB.61.R7861.
Kozhevnikov, M, Narayanamurti, V, Reddy, C V, Xin, H P, Tu, C W, Mascarenhas, A, and Zhang, Y. Wed . "Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy". United States. doi:10.1103/PhysRevB.61.R7861.
@article{osti_20215768,
title = {Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy},
author = {Kozhevnikov, M and Narayanamurti, V and Reddy, C V and Xin, H P and Tu, C W and Mascarenhas, A and Zhang, Y},
abstractNote = {The evolution of GaAs{sub 1-x}N{sub x} band structure at low nitrogen concentrations (up to x=0.021) is studied by ballistic electron emission microscopy (BEEM) spectra of Au/GaAs{sub 1-x}N{sub x} heterostructures. Two peaks observed in the second derivative BEEM spectra are identified with the contribution from the {gamma}- and L-like bands of GaAs{sub 1-x}N{sub x}. As the nitrogen concentration increases, the energetic separation between these peaks increases, with a relative decrease of the L-like band contribution to the BEEM current. In addition, we found a strong decrease of the Au/GaAs{sub 1-x}N{sub x} Schottky barrier with the nitrogen incorporation, from {approx}0.92 eV at x=0 down to {approx}0.55 eV at x=0.021. The observed Schottky barrier reduction approximates the GaAs{sub 1-x}N{sub x} band-gap reduction. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.R7861},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 12,
volume = 61,
place = {United States},
year = {2000},
month = {3}
}