Improvement in electrical and dielectric behavior of (Ba,Sr)TiO{sub 3} thin films by Ag doping
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States)
- Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
In this paper, we report the fabrication and characterization of Ag/(Ba,Sr)TiO{sub 3}/LaNiO{sub 3}/LaAlO{sub 3} capacitors. All the films, including the top (silver) and bottom (LaNiO{sub 3}) electrodes, were deposited using a pulsed laser deposition technique. The electrical and dielectric properties of (Ba,Sr)TiO{sub 3} capacitors were found to improve significantly by means of silver doping. For example, the leakage current density of a Ag/Ag-doped (Ba,Sr)TiO3/LaNiO{sub 3}/capacitor was about an order of magnitude lower and the dielectric constant was {approx}40% higher than that of a Ag/(Ba,Sr)TiO{sub 3}/LaNiO{sub 3}/capacitor over a range of biases. The improvement in the electrical properties of (Ba,Sr)TiO{sub 3} films is believed to be caused by a double role of silver. The first one is associated with the reduced oxygen vacancies due to improved oxygenation of BST films in the presence of silver, and the second one is associated with the unpinning effect of domain walls again in the presence of silver. (c) 2000 The American Physical Society.
- OSTI ID:
- 20215750
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 61, Issue 11; Other Information: PBD: 15 Mar 2000; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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