Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

Journal Article · Mon Mar 27 00:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126123· OSTI ID:20215691

Chow, W W ^[1]; Amano, H ^[2]; Akasaki, I ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
2. Department of Electrical and Electronic Engineering, Meijo University, Tempaku-ku, Nagoya 468, (Japan)

Filamentation and, consequently, output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of the interplay of quantum-confined Stark effect and many-body interactions. For an In{sub 0.2}Ga{sub 0.8}N/GaN gain medium, the antiguiding factor in a thick 4 nm quantum well is considerably smaller than that for a narrow 2 nm one. As a result, lasers with the thicker quantum well maintain fundamental-mode operation with wider stripe widths and at significantly higher excitation levels. (c) 2000 American Institute of Physics.

• OSTI ID: 20215691
• Journal Information: Applied Physics Letters, Vol. 76, Issue 13; Other Information: PBD: 27 Mar 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INDIUM NITRIDES
GALLIUM NITRIDES
SEMICONDUCTOR LASERS
FILAMENTS
STARK EFFECT
OPERATION
THEORETICAL DATA