The use of a surfactant (Sb) to induce triple period ordering in GaInP
- College of Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
- Kwanju Institute of Science and Technology, Kwanju 500-712, Korea (Korea, Republic of)
A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on (001) GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasing the concentration of Sb in the vapor beyond a critical Sb to P ratio [Sb/P(v)] of 4x10{sup -4} gives a reversal of this behavior. The band gap energy is observed to decrease by 50 meV at a concentration of Sb/P(v)=1.6x10{sup -3}, coincident with the formation of an ordered phase with a period triple the normal lattice spacing along the [111] and [1(bar sign)1(bar sign)1] directions. The formation of this new ordered structure is believed to be related to high concentrations of Sb on the surface, which leads to a change in the surface reconstruction from (2x4)-like to (2x3)-like, as indicated by surface photoabsorption performed in situ. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20215579
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 11; Other Information: PBD: 13 Mar 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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