Isolation of a metallic Si(111)7x7 surface reconstruction via separation by implanted oxygen

Journal Article · Mon Feb 07 00:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125877· OSTI ID:20215269

Noh, M ^[1]; Jellison, Jr, G E ^[2]; Namavar, F ^[3]; Weitering, H H ^[1]

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1. Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
3. Spire Corporation, Bedford, Massachusetts 01730 (United States)

High-quality Si(111)7x7 surface reconstructions have been observed on (111)-oriented Si/SiO{sub 2}/Si substrates, prepared via separation by implantation of oxygen, or ''SIMOX,'' with top layer thicknesses as small as 220 Aa. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7x7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer. (c) 2000 American Institute of Physics.

• OSTI ID: 20215269
• Journal Information: Applied Physics Letters, Vol. 76, Issue 6; Other Information: PBD: 7 Feb 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
SILICON
SURFACE PROPERTIES
CRYSTAL STRUCTURE
OXIDATION
ION IMPLANTATION
INTEGRATED CIRCUITS
EXPERIMENTAL DATA