Stability of Si-Interstitial Defects: From Point to Extended Defects

Journal Article · Mon Jan 17 00:00:00 EST 2000 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.84.503· OSTI ID:20215243

Kim, Jeongnim ^[1]; Kirchhoff, Florian ^[2]; Wilkins, John W ^[1]; Khan, Furrukh S ^[2]

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1. Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States)
2. Department of Electrical Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

Trends in the growth of extended interstitial defects are extracted from extensive tight-binding and ab inito local density approximation simulations. With an increasing number of interstitials, the stable defect shape evolves from compact to chainlike to rodlike. The rodlike {l_brace}311{r_brace} defect, formed from (011) interstitial chains, is stabilized as it grows, elongating in the chain direction. Accurate parametrization of the defect-formation energy on the number of interstitials and interstitial chains, together with the anisotropy of the interstitial capture radius, enables macroscopic defect-growth simulations. (c) 2000 The American Physical Society.

• OSTI ID: 20215243
• Journal Information: Physical Review Letters, Vol. 84, Issue 3; Other Information: PBD: 17 Jan 2000; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
INTERSTITIALS
CRYSTAL DEFECTS
SIMULATION
STABILITY
POINT DEFECTS
ION IMPLANTATION
THEORETICAL DATA