Inelastic X-ray scattering from 6H-SiC
Abstract
The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.
- Authors:
-
- Argonne National Lab., IL (United States). Advanced Photon Source
- Argonne National Lab., IL (United States). Material Science Div.|[Univ. of Illinois, Chicago, IL (United States). Dept. of Physics
- Brookhaven National Lab., Upton, NY (United States). National Synchrotron Light Source
- Publication Date:
- Research Org.:
- Argonne National Lab., IL (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 201761
- Report Number(s):
- ANL/XFD/CP-86585; CONF-951007-15
ON: DE96005208; TRN: 96:008306
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Technical Report
- Resource Relation:
- Conference: 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995; Other Information: PBD: Jul 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 66 PHYSICS; SILICON CARBIDES; ELECTRONIC STRUCTURE; X RADIATION; INELASTIC SCATTERING; SEMICONDUCTOR MATERIALS; DIAGNOSTIC TECHNIQUES; EXPERIMENTAL DATA; SYNCHROTRON RADIATION; COMPARATIVE EVALUATIONS
Citation Formats
Macrander, A.T., Blasdell, B., Montano, P.A., and Kao, C.C. Inelastic X-ray scattering from 6H-SiC. United States: N. p., 1995.
Web. doi:10.2172/201761.
Macrander, A.T., Blasdell, B., Montano, P.A., & Kao, C.C. Inelastic X-ray scattering from 6H-SiC. United States. doi:10.2172/201761.
Macrander, A.T., Blasdell, B., Montano, P.A., and Kao, C.C. Sat .
"Inelastic X-ray scattering from 6H-SiC". United States.
doi:10.2172/201761. https://www.osti.gov/servlets/purl/201761.
@article{osti_201761,
title = {Inelastic X-ray scattering from 6H-SiC},
author = {Macrander, A.T. and Blasdell, B. and Montano, P.A. and Kao, C.C.},
abstractNote = {The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.},
doi = {10.2172/201761},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 1995},
month = {Sat Jul 01 00:00:00 EDT 1995}
}
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Inelastic x-ray scattering from 6H-SiC, an experimental and theoretical study.
No abstract prepared. -
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The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering
The 3C-6H polytypic transition in SiC single crystals is studied by means of diffuse x-ray scattering. Based on numerical simulations of the diffuse scattering intensity distribution we unambiguously prove that the 3C-6H transition in SiC occurs through the glide of partial dislocations and not by the ''layer displacement'' mechanism (i.e., local diffusional rearrangement of the Si and C atoms). The technique is extremely sensitive and can be used as a nondestructive mean to obtain statistically relevant values of the transition level down to {approx}0.05%.