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Title: A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells

Abstract

The degradation and annealing kinetics of both a-Si:H and a-SiGe:H single-junction solar cells were investigated under varying conditions. In every case, the kinetics associated with degradation and annealing were slower for a-SiGe:H cells than for a a-Si:H cells. Since deuterium diffusion studies indicate that the hydrogen in the a-SiGe:H films diffuses more slowly than that in the a-Si:H films, hydrogen motion may play a role in determining both the degradation and annealing kinetics of the devices.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Solarex, Toano, VA (US)
Sponsoring Org.:
National Renewable Energy Laboratory
OSTI Identifier:
20107931
Resource Type:
Conference
Resource Relation:
Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1999; Related Information: In: Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557, by Branz, H.M.; Collins, R.W.; Okamoto, Hiroaki; Guha, S.; Schropp, R. [eds.], 908 pages.
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; GERMANIUM SILICIDES; SOLAR CELLS; ANNEALING; HYDROGEN ADDITIONS; AMORPHOUS STATE; HYDROGEN; DIFFUSION; SPECTRAL RESPONSE

Citation Formats

Carlson, D E, Chen, L F, Ganguly, G, Lin, G, Middya, A R, Crandall, R S, and Reedy, R. A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells. United States: N. p., 1999. Web.
Carlson, D E, Chen, L F, Ganguly, G, Lin, G, Middya, A R, Crandall, R S, & Reedy, R. A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells. United States.
Carlson, D E, Chen, L F, Ganguly, G, Lin, G, Middya, A R, Crandall, R S, and Reedy, R. Thu . "A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells". United States.
@article{osti_20107931,
title = {A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells},
author = {Carlson, D E and Chen, L F and Ganguly, G and Lin, G and Middya, A R and Crandall, R S and Reedy, R},
abstractNote = {The degradation and annealing kinetics of both a-Si:H and a-SiGe:H single-junction solar cells were investigated under varying conditions. In every case, the kinetics associated with degradation and annealing were slower for a-SiGe:H cells than for a a-Si:H cells. Since deuterium diffusion studies indicate that the hydrogen in the a-SiGe:H films diffuses more slowly than that in the a-Si:H films, hydrogen motion may play a role in determining both the degradation and annealing kinetics of the devices.},
doi = {},
url = {https://www.osti.gov/biblio/20107931}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {7}
}

Conference:
Other availability
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