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Title: Low hydrogen content, high quality hydrogenated amorphous silicon grown by hot-wire CVD

Abstract

The authors grow hydrogenated amorphous silicon (a-Si:H) by Hot-Wire Chemical Vapor Deposition (HWCVD). The early work with this technique has shown that they can grow a-Si:H that is different from typical a-Si:H materials. Specifically, they demonstrated the ability to grow a-Si:H of exceptional quality with very low hydrogen (H) contents (0.01 to 4 at.%). The deposition chambers in which this early work was done have two limitations; they hold only small-area substrates and they are incompatible with a load-lock. In the efforts to scale up to larger area chambers--that have load-lock compatibility--they encountered difficulty in growing high-quality films that also have a low H content. Substrate temperature has a direct effect on the H content of HWCVD grown a-Si:H. They found that making dramatic changes to the other deposition process parameters--at fixed substrate temperature and filament-to-substrate spacing--did not have much effect on the H content of the resulting films in the new chambers. However, these changes did have profound effects on film quality. They can grow high-quality a-Si:H in the new larger area chambers at 4 at. % H. For example, the lowest known stabilized defect density of a-Si:H is approximately 2 x 10{sup 16} cm{sup {minus}3}, which they havemore » grown in the new chamber at 18 {angstrom}/s. Making changes to the original chamber--making it more like the new reactor--did not increase the hydrogen content at a fixed substrate temperature and filament-to-substrate spacing. They continued to grow high quality films with low H content in spite of these changes. An interesting, and very useful, result of these experiments is that the orientation of the filament with respect to silane flow direction had no influence on film quality or the H content of the films. The condition of the filament is much more important to growing quality films than the geometry of the chamber due to tungsten-silicide formation on the filament.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
USDOE
OSTI Identifier:
20107891
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Conference
Resource Relation:
Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1999; Related Information: In: Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557, by Branz, H.M.; Collins, R.W.; Okamoto, Hiroaki; Guha, S.; Schropp, R. [eds.], 908 pages.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; AMORPHOUS STATE; HYDROGEN ADDITIONS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CHEMICAL COMPOSITION; CHEMICAL REACTORS; SOLAR CELLS

Citation Formats

Nelson, B P, Crandall, R S, Iwaniczko, E, Mahan, A H, Wang, Q, Xu, Y, and Gao, W. Low hydrogen content, high quality hydrogenated amorphous silicon grown by hot-wire CVD. United States: N. p., 1999. Web.
Nelson, B P, Crandall, R S, Iwaniczko, E, Mahan, A H, Wang, Q, Xu, Y, & Gao, W. Low hydrogen content, high quality hydrogenated amorphous silicon grown by hot-wire CVD. United States.
Nelson, B P, Crandall, R S, Iwaniczko, E, Mahan, A H, Wang, Q, Xu, Y, and Gao, W. 1999. "Low hydrogen content, high quality hydrogenated amorphous silicon grown by hot-wire CVD". United States.
@article{osti_20107891,
title = {Low hydrogen content, high quality hydrogenated amorphous silicon grown by hot-wire CVD},
author = {Nelson, B P and Crandall, R S and Iwaniczko, E and Mahan, A H and Wang, Q and Xu, Y and Gao, W},
abstractNote = {The authors grow hydrogenated amorphous silicon (a-Si:H) by Hot-Wire Chemical Vapor Deposition (HWCVD). The early work with this technique has shown that they can grow a-Si:H that is different from typical a-Si:H materials. Specifically, they demonstrated the ability to grow a-Si:H of exceptional quality with very low hydrogen (H) contents (0.01 to 4 at.%). The deposition chambers in which this early work was done have two limitations; they hold only small-area substrates and they are incompatible with a load-lock. In the efforts to scale up to larger area chambers--that have load-lock compatibility--they encountered difficulty in growing high-quality films that also have a low H content. Substrate temperature has a direct effect on the H content of HWCVD grown a-Si:H. They found that making dramatic changes to the other deposition process parameters--at fixed substrate temperature and filament-to-substrate spacing--did not have much effect on the H content of the resulting films in the new chambers. However, these changes did have profound effects on film quality. They can grow high-quality a-Si:H in the new larger area chambers at 4 at. % H. For example, the lowest known stabilized defect density of a-Si:H is approximately 2 x 10{sup 16} cm{sup {minus}3}, which they have grown in the new chamber at 18 {angstrom}/s. Making changes to the original chamber--making it more like the new reactor--did not increase the hydrogen content at a fixed substrate temperature and filament-to-substrate spacing. They continued to grow high quality films with low H content in spite of these changes. An interesting, and very useful, result of these experiments is that the orientation of the filament with respect to silane flow direction had no influence on film quality or the H content of the films. The condition of the filament is much more important to growing quality films than the geometry of the chamber due to tungsten-silicide formation on the filament.},
doi = {},
url = {https://www.osti.gov/biblio/20107891}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jul 01 00:00:00 EDT 1999},
month = {Thu Jul 01 00:00:00 EDT 1999}
}

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