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Title: Properties of heteroepitaxial 3C-SiC layer on Si using Si{sub 2}(CH{sub 3}){sub 6} by CVD

Abstract

Single crystal cubic silicon carbide (3C-SiC) has been deposited on Si(100) by atmospheric CVD at 1,350 C using Si{sub 2}(CH{sub 3}){sub 6}. The 3C-SiC epilayers were characterized by XRD, Raman scattering and photoluminescence (PL). The 3C-SiC distinct TO near 796 cm{sup {minus}1} and LO near 973 cm{sup {minus}1} were recorded by Raman measurement. The PL spectra of SiC films at 11 K included the nitrogen-bound exciton (N-BE) lines, the defect-related W band near 2.15eV, and 2.13eV peak corresponding to D-A pair recombination as well as the divancy-related D1 peak at 1.97eV. The thickness dependences of Raman and PL measurement were made and it was observed that tensile stress and strain in films decrease with increasing film thickness. Electrical properties of the films were measured by making schottky diodes and using Van der Pauw method. Above 300 K, the electron mobility changed as {micro}{sub H} {approximately} T{sup {minus}1.45 {approximately} {minus}1.56} and the highest mobility was about 400 cm{sup 2} V{sup {minus}1} s{sup {minus}1} at room temperature. In 3C-SiC the scattering processes are affected prominently by acoustic scattering in this temperature range.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Kyoto Inst. of Tech. (JP)
OSTI Identifier:
20104709
Resource Type:
Conference
Resource Relation:
Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/08/1999; Other Information: PBD: 1999; Related Information: In: Wide-band semiconductors for high-power, high-frequency and high-temperature applications -- 1999. Materials Research Society symposium proceedings: Volume 572, by Binari, S.C.; Burk, A.A.; Melloch, M.R.; Nguyen, C. [eds.], 575 pages.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; PRECURSOR; STRESSES; MECHANICAL PROPERTIES; MICROSTRUCTURE; EXPERIMENTAL DATA

Citation Formats

Chen, Y, Masuda, Y, Nishio, Y, Matsumoto, K, and Nishino, S. Properties of heteroepitaxial 3C-SiC layer on Si using Si{sub 2}(CH{sub 3}){sub 6} by CVD. United States: N. p., 1999. Web.
Chen, Y, Masuda, Y, Nishio, Y, Matsumoto, K, & Nishino, S. Properties of heteroepitaxial 3C-SiC layer on Si using Si{sub 2}(CH{sub 3}){sub 6} by CVD. United States.
Chen, Y, Masuda, Y, Nishio, Y, Matsumoto, K, and Nishino, S. Thu . "Properties of heteroepitaxial 3C-SiC layer on Si using Si{sub 2}(CH{sub 3}){sub 6} by CVD". United States.
@article{osti_20104709,
title = {Properties of heteroepitaxial 3C-SiC layer on Si using Si{sub 2}(CH{sub 3}){sub 6} by CVD},
author = {Chen, Y and Masuda, Y and Nishio, Y and Matsumoto, K and Nishino, S},
abstractNote = {Single crystal cubic silicon carbide (3C-SiC) has been deposited on Si(100) by atmospheric CVD at 1,350 C using Si{sub 2}(CH{sub 3}){sub 6}. The 3C-SiC epilayers were characterized by XRD, Raman scattering and photoluminescence (PL). The 3C-SiC distinct TO near 796 cm{sup {minus}1} and LO near 973 cm{sup {minus}1} were recorded by Raman measurement. The PL spectra of SiC films at 11 K included the nitrogen-bound exciton (N-BE) lines, the defect-related W band near 2.15eV, and 2.13eV peak corresponding to D-A pair recombination as well as the divancy-related D1 peak at 1.97eV. The thickness dependences of Raman and PL measurement were made and it was observed that tensile stress and strain in films decrease with increasing film thickness. Electrical properties of the films were measured by making schottky diodes and using Van der Pauw method. Above 300 K, the electron mobility changed as {micro}{sub H} {approximately} T{sup {minus}1.45 {approximately} {minus}1.56} and the highest mobility was about 400 cm{sup 2} V{sup {minus}1} s{sup {minus}1} at room temperature. In 3C-SiC the scattering processes are affected prominently by acoustic scattering in this temperature range.},
doi = {},
url = {https://www.osti.gov/biblio/20104709}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {7}
}

Conference:
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