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Title: The effects of damage on hydrogen-implant-induced thin-film separation from bulk silicon carbide

Abstract

Exfoliation of SiC by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. SiC thin films produced by this process exhibit unacceptably high resistivity because defects generated by the impact neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the impact, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of SiC is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required tomore » affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiCOI which is sufficiently free of defects and, thus, more easily electrically activated.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Motorola Inc., Tempe, AZ (US)
OSTI Identifier:
20104697
Resource Type:
Conference
Resource Relation:
Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/08/1999; Other Information: PBD: 1999; Related Information: In: Wide-band semiconductors for high-power, high-frequency and high-temperature applications -- 1999. Materials Research Society symposium proceedings: Volume 572, by Binari, S.C.; Burk, A.A.; Melloch, M.R.; Nguyen, C. [eds.], 575 pages.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; PHYSICAL RADIATION EFFECTS; ION IMPLANTATION; ANNEALING; HYDROGEN IONS; EXPERIMENTAL DATA

Citation Formats

Gregory, R B, Holland, O W, Thomas, D K, Wetteroth, T A, and Wilson, S R. The effects of damage on hydrogen-implant-induced thin-film separation from bulk silicon carbide. United States: N. p., 1999. Web.
Gregory, R B, Holland, O W, Thomas, D K, Wetteroth, T A, & Wilson, S R. The effects of damage on hydrogen-implant-induced thin-film separation from bulk silicon carbide. United States.
Gregory, R B, Holland, O W, Thomas, D K, Wetteroth, T A, and Wilson, S R. 1999. "The effects of damage on hydrogen-implant-induced thin-film separation from bulk silicon carbide". United States.
@article{osti_20104697,
title = {The effects of damage on hydrogen-implant-induced thin-film separation from bulk silicon carbide},
author = {Gregory, R B and Holland, O W and Thomas, D K and Wetteroth, T A and Wilson, S R},
abstractNote = {Exfoliation of SiC by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. SiC thin films produced by this process exhibit unacceptably high resistivity because defects generated by the impact neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the impact, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of SiC is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiCOI which is sufficiently free of defects and, thus, more easily electrically activated.},
doi = {},
url = {https://www.osti.gov/biblio/20104697}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jul 01 00:00:00 EDT 1999},
month = {Thu Jul 01 00:00:00 EDT 1999}
}

Conference:
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