Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
- and others
The authors comprehensively studied InGaN/ GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification the authors performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm{sup {minus}1} were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.
- Research Organization:
- TU Berlin (DE)
- OSTI ID:
- 20104605
- Resource Relation:
- Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
- Country of Publication:
- United States
- Language:
- English
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