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Title: Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

Abstract

Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of {approximately}2x10{sup 19} atoms/cm{sup 3} in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-{micro}S compared to a sheet conductance of 20-{micro}S for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
North Carolina State Univ., Raleigh, NC (US)
OSTI Identifier:
20104596
Resource Type:
Conference
Resource Relation:
Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; VAPOR PHASE EPITAXY; ALUMINIUM NITRIDES; GALLIUM NITRIDES; THIN FILMS; DOPED MATERIALS; MAGNESIUM; INTERFACES; EXPERIMENTAL DATA

Citation Formats

Michel, A., Hanser, D., Davis, R.F., Qiao, D., Lau, S.S., Yu, L.S., Sun, W., and Asbeck, P.. Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures. United States: N. p., 2000. Web.
Michel, A., Hanser, D., Davis, R.F., Qiao, D., Lau, S.S., Yu, L.S., Sun, W., & Asbeck, P.. Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures. United States.
Michel, A., Hanser, D., Davis, R.F., Qiao, D., Lau, S.S., Yu, L.S., Sun, W., and Asbeck, P.. Sat . "Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures". United States.
@article{osti_20104596,
title = {Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures},
author = {Michel, A. and Hanser, D. and Davis, R.F. and Qiao, D. and Lau, S.S. and Yu, L.S. and Sun, W. and Asbeck, P.},
abstractNote = {Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of {approximately}2x10{sup 19} atoms/cm{sup 3} in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-{micro}S compared to a sheet conductance of 20-{micro}S for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {7}
}

Conference:
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