Co-doping characteristics of Si and Zn with Mg in p-type GaN
Abstract
The authors investigated the doping characteristics of Mg doped, Mg-Si co-doped, and Mg-Zn co-doped Gan films grown by metalorganic chemical vapor deposition. They have grown p-GaN film with a resistivity of 1.26 {center_dot} cm and a hole density of 4.3 x 10{sup 17} cm{sup {minus}3} by means of Mg-Si co-doping technique. The Mg-Si co-doping characteristic was also explained effectively by taking advantage of the concept of competitive adsorption between Mg and Si during the growth. For Mg-Zn co-doping, p-GaN showing a low electrical resistivity (0.7 {center_dot} cm) and a high hole concentration (8.5 x 10{sup 17} cm{sup {minus}3}) was successfully grown without the degradation of structural quality of the film. Besides, the measured specific contact resistance for Mg-Zn co-doped GaN film is 5.0 x 10{sup {minus}4} {center_dot} cm{sup 2}, which is lower value by one order of magnitude than that for only Mg doped GaN film (1.9 x 10{sup {minus}3} {center_dot} cm{sup 2}).
- Authors:
-
- and others
- Publication Date:
- Research Org.:
- Chonbuk National Univ. (KR)
- OSTI Identifier:
- 20104564
- Resource Type:
- Conference
- Resource Relation:
- Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ELECTRICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; DOPED MATERIALS; MAGNESIUM; SILICON; THIN FILMS; HOLES; EXPERIMENTAL DATA
Citation Formats
Kim, K S, Oh, C S, and Han, M S. Co-doping characteristics of Si and Zn with Mg in p-type GaN. United States: N. p., 2000.
Web.
Kim, K S, Oh, C S, & Han, M S. Co-doping characteristics of Si and Zn with Mg in p-type GaN. United States.
Kim, K S, Oh, C S, and Han, M S. 2000.
"Co-doping characteristics of Si and Zn with Mg in p-type GaN". United States.
@article{osti_20104564,
title = {Co-doping characteristics of Si and Zn with Mg in p-type GaN},
author = {Kim, K S and Oh, C S and Han, M S},
abstractNote = {The authors investigated the doping characteristics of Mg doped, Mg-Si co-doped, and Mg-Zn co-doped Gan films grown by metalorganic chemical vapor deposition. They have grown p-GaN film with a resistivity of 1.26 {center_dot} cm and a hole density of 4.3 x 10{sup 17} cm{sup {minus}3} by means of Mg-Si co-doping technique. The Mg-Si co-doping characteristic was also explained effectively by taking advantage of the concept of competitive adsorption between Mg and Si during the growth. For Mg-Zn co-doping, p-GaN showing a low electrical resistivity (0.7 {center_dot} cm) and a high hole concentration (8.5 x 10{sup 17} cm{sup {minus}3}) was successfully grown without the degradation of structural quality of the film. Besides, the measured specific contact resistance for Mg-Zn co-doped GaN film is 5.0 x 10{sup {minus}4} {center_dot} cm{sup 2}, which is lower value by one order of magnitude than that for only Mg doped GaN film (1.9 x 10{sup {minus}3} {center_dot} cm{sup 2}).},
doi = {},
url = {https://www.osti.gov/biblio/20104564},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 2000},
month = {Sat Jul 01 00:00:00 EDT 2000}
}