Structural properties of (GaIn)(AsN)/GaAs MQW structures grown by MOVPE[Multiple Quantum Wells, Metal Organic Vapor Phase Epitaxy]
In this work, the authors investigate the structural properties of (GaIn)(AsN)/GaAs multiple quantum wells (MQW) grown at low temperature by metalorganic vapor phase epitaxy. The structural properties, in particular the In- and N-incorporation, the lattice strain (strain modulation), the structural perfection of the metastable (GaIn)(AsN) material system and the structural quality of the (GaIn)(AsN)/GaAs interfaces are investigated by means of high-resolution x-ray diffraction, transmission electron microscopy (TEM), and secondary ion mass spectrometry. They demonstrate that (GaIn)(AsN) layers of high structural quality can be fabricated up to lattice mismatches of 4%. The experiments reveal that N and In atoms are localized in the quaternary material and no evidences of In-segregation or N-interdiffusion could be found. TEM analyses reveal a low defect density in the highly strained layers, but no clustering or interface undulation could be detected. High-resolution TEM images show that (GaIn)(AsN)/GaAs interfaces are slightly rougher than GaAs/(GaIn)(AsN) ones.
- Research Organization:
- PASTIS-CNRSM, Brindisi (IT)
- Sponsoring Organization:
- Volkswagen-Stiftung
- OSTI ID:
- 20104554
- Resource Relation:
- Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
- Country of Publication:
- United States
- Language:
- English
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