Structural evolution of GaN during initial stage MOCVD growth[Metal Organic Chemical Vapor Deposition]
The structural evolution of GaN films during the initial growth process of metalorganic chemical vapor deposition (MOCVD)--low temperature nucleation layer growth, annealing, and high temperature epitaxial growth--was investigated in a synchrotron x-ray scattering experiment. The nucleation layer grown at 560 C that was predominantly cubic GaN consisted of tensile-strained aligned domains and relaxed misaligned domains. The hexagonal GaN, transformed from the cubic GaN during annealing to 1,100 C, showed disordered stacking. The atomic layer spacing decreased as the fraction of the hexagonal domains increased. Subsequent growth of epitaxial GaN at 1,100 C resulted in the formation of ordered hexagonal GaN domains with rather broad mosaicity.
- Research Organization:
- Pohang Univ. of Science and Technology (KR)
- Sponsoring Organization:
- Korean Research Foundation; Korean Ministry of Science and Technology
- OSTI ID:
- 20104553
- Resource Relation:
- Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
- Country of Publication:
- United States
- Language:
- English
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