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Title: Integration of PLZT and BST family oxides with GaN[Lead Lanthanum Zirconate Titanate, Barium Strontium Titanate]

Abstract

Recent advances in the processing of complex-oxide materials has allowed the authors to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al{sub 2}O{sub 3} in a thickness range of 0.3--5 {micro}m by a sol-gel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5 {center_dot} 10{sup {minus}8} A/cm{sup 2}.

Authors:
; ; ;
Publication Date:
Research Org.:
NZ Applied Technologies, Woburn, MA (US)
OSTI Identifier:
20104531
Resource Type:
Conference
Resource Relation:
Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRICAL PROPERTIES; OPTICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; LEAD OXIDES; LANTHANUM OXIDES; TITANIUM OXIDES; BARIUM OXIDES; STRONTIUM OXIDES; SUBSTRATES; GALLIUM NITRIDES; SAPPHIRE; THIN FILMS; EXPERIMENTAL DATA

Citation Formats

Osinsky, A.V., Fuflyigin, V.N., Wang, F., and Vakhutinsky, P.I. Integration of PLZT and BST family oxides with GaN[Lead Lanthanum Zirconate Titanate, Barium Strontium Titanate]. United States: N. p., 2000. Web.
Osinsky, A.V., Fuflyigin, V.N., Wang, F., & Vakhutinsky, P.I. Integration of PLZT and BST family oxides with GaN[Lead Lanthanum Zirconate Titanate, Barium Strontium Titanate]. United States.
Osinsky, A.V., Fuflyigin, V.N., Wang, F., and Vakhutinsky, P.I. Sat . "Integration of PLZT and BST family oxides with GaN[Lead Lanthanum Zirconate Titanate, Barium Strontium Titanate]". United States.
@article{osti_20104531,
title = {Integration of PLZT and BST family oxides with GaN[Lead Lanthanum Zirconate Titanate, Barium Strontium Titanate]},
author = {Osinsky, A.V. and Fuflyigin, V.N. and Wang, F. and Vakhutinsky, P.I.},
abstractNote = {Recent advances in the processing of complex-oxide materials has allowed the authors to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al{sub 2}O{sub 3} in a thickness range of 0.3--5 {micro}m by a sol-gel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5 {center_dot} 10{sup {minus}8} A/cm{sup 2}.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {7}
}

Conference:
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