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Title: Scanning transmission electron microscopy-energy dispersive X-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures

Abstract

Elemental distributions and chemical bonding states of oxygen-ion-implanted SiC have been examined using scanning transmission electron microscopy (STEM) equipped with an energy dispersive X-ray spectrometer (EDX) and an electron energy loss spectrometer (EELS). 6H-SiC single crystals with [0001] orientation were implanted with 180 keV oxygen ions at 650 C to fluences of 0.7 x 10{sup 18} and 1.4 x 10{sup 18} cm{sup 2}. STEM-EDX/EELS measurements show that the low-dose sample possesses a buried amorphous SiC{sub x}O{sub y} layer, and oxygen concentration peaks around the center of the buried amorphous layer. On the other hand, a well-defined SiO{sub 2} layer including self-bonded carbon atoms is formed in the high-dose sample, and this amorphous region has a layered structure due to compositional variations of silicon, carbon, and oxygen. A slight chemical disordering induced by implantation is also confirmed to exist in topmost SiC layer.

Authors:
; ;
Publication Date:
Research Org.:
Kyushu Univ., Hakozaki, Fukuoka (JP)
Sponsoring Org.:
USDOE
OSTI Identifier:
20080586
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 147; Journal Issue: 5; Other Information: PBD: May 2000; Journal ID: ISSN 0013-4651
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; SILICON CARBIDES; ION IMPLANTATION; OXYGEN; AMORPHOUS STATE; SILICON OXIDES; ORDER-DISORDER TRANSFORMATIONS; INTEGRATED CIRCUITS

Citation Formats

Ishimaru, Manabu, Dickerson, R.M., and Sickafus, K.E. Scanning transmission electron microscopy-energy dispersive X-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures. United States: N. p., 2000. Web. doi:10.1149/1.1393470.
Ishimaru, Manabu, Dickerson, R.M., & Sickafus, K.E. Scanning transmission electron microscopy-energy dispersive X-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures. United States. doi:10.1149/1.1393470.
Ishimaru, Manabu, Dickerson, R.M., and Sickafus, K.E. Mon . "Scanning transmission electron microscopy-energy dispersive X-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures". United States. doi:10.1149/1.1393470.
@article{osti_20080586,
title = {Scanning transmission electron microscopy-energy dispersive X-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures},
author = {Ishimaru, Manabu and Dickerson, R.M. and Sickafus, K.E.},
abstractNote = {Elemental distributions and chemical bonding states of oxygen-ion-implanted SiC have been examined using scanning transmission electron microscopy (STEM) equipped with an energy dispersive X-ray spectrometer (EDX) and an electron energy loss spectrometer (EELS). 6H-SiC single crystals with [0001] orientation were implanted with 180 keV oxygen ions at 650 C to fluences of 0.7 x 10{sup 18} and 1.4 x 10{sup 18} cm{sup 2}. STEM-EDX/EELS measurements show that the low-dose sample possesses a buried amorphous SiC{sub x}O{sub y} layer, and oxygen concentration peaks around the center of the buried amorphous layer. On the other hand, a well-defined SiO{sub 2} layer including self-bonded carbon atoms is formed in the high-dose sample, and this amorphous region has a layered structure due to compositional variations of silicon, carbon, and oxygen. A slight chemical disordering induced by implantation is also confirmed to exist in topmost SiC layer.},
doi = {10.1149/1.1393470},
journal = {Journal of the Electrochemical Society},
issn = {0013-4651},
number = 5,
volume = 147,
place = {United States},
year = {2000},
month = {5}
}