Growth of large-grain silicon layers by atmospheric iodine vapor transport
A novel growth method for high speed deposition of large-grain polycrystalline silicon layers on foreign substrates is described. The deposited silicon layers with a thickness of 10--40 {micro}m on high temperature glass substrate exhibit good uniformity and large grain sizes up to 20 {micro}m. A typical deposition rate is 3 {micro}m/min for a source/substrate temperature of 1,100/950 C. The growth method is based on iodine vapor transport of silicon at atmospheric pressure with a vertical thermal gradient. A gravity trapping effect allows use of an open-tube system without much loss of the volatile gas species or reduced iodine partial pressure, as is the case in a normal open system involving a carrier gas. The material appears to be an excellent candidate for thin-layer crystalline silicon solar cells.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 20080585
- Journal Information:
- Journal of the Electrochemical Society, Vol. 147, Issue 5; Other Information: PBD: May 2000; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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