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Title: Growth of large-grain silicon layers by atmospheric iodine vapor transport

Abstract

A novel growth method for high speed deposition of large-grain polycrystalline silicon layers on foreign substrates is described. The deposited silicon layers with a thickness of 10--40 {micro}m on high temperature glass substrate exhibit good uniformity and large grain sizes up to 20 {micro}m. A typical deposition rate is 3 {micro}m/min for a source/substrate temperature of 1,100/950 C. The growth method is based on iodine vapor transport of silicon at atmospheric pressure with a vertical thermal gradient. A gravity trapping effect allows use of an open-tube system without much loss of the volatile gas species or reduced iodine partial pressure, as is the case in a normal open system involving a carrier gas. The material appears to be an excellent candidate for thin-layer crystalline silicon solar cells.

Authors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
USDOE
OSTI Identifier:
20080585
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 147; Journal Issue: 5; Other Information: PBD: May 2000; Journal ID: ISSN 0013-4651
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; POLYCRYSTALS; CRYSTAL GROWTH; GRAIN SIZE; PHYSICAL VAPOR DEPOSITION; SILICON SOLAR CELLS; FABRICATION

Citation Formats

Wang, T.H., and Ciszek, T.F. Growth of large-grain silicon layers by atmospheric iodine vapor transport. United States: N. p., 2000. Web. doi:10.1149/1.1393463.
Wang, T.H., & Ciszek, T.F. Growth of large-grain silicon layers by atmospheric iodine vapor transport. United States. doi:10.1149/1.1393463.
Wang, T.H., and Ciszek, T.F. Mon . "Growth of large-grain silicon layers by atmospheric iodine vapor transport". United States. doi:10.1149/1.1393463.
@article{osti_20080585,
title = {Growth of large-grain silicon layers by atmospheric iodine vapor transport},
author = {Wang, T.H. and Ciszek, T.F.},
abstractNote = {A novel growth method for high speed deposition of large-grain polycrystalline silicon layers on foreign substrates is described. The deposited silicon layers with a thickness of 10--40 {micro}m on high temperature glass substrate exhibit good uniformity and large grain sizes up to 20 {micro}m. A typical deposition rate is 3 {micro}m/min for a source/substrate temperature of 1,100/950 C. The growth method is based on iodine vapor transport of silicon at atmospheric pressure with a vertical thermal gradient. A gravity trapping effect allows use of an open-tube system without much loss of the volatile gas species or reduced iodine partial pressure, as is the case in a normal open system involving a carrier gas. The material appears to be an excellent candidate for thin-layer crystalline silicon solar cells.},
doi = {10.1149/1.1393463},
journal = {Journal of the Electrochemical Society},
issn = {0013-4651},
number = 5,
volume = 147,
place = {United States},
year = {2000},
month = {5}
}