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Title: Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals

Abstract

Epitaxial CdSe layers were electrodeposited from aqueous solutions onto InP and GaAs single crystals. The analysis of current transients shows that the growth kinetics corresponds to the Scharifker model assuming a progressive nucleation followed by three-dimensional diffusion-limited growth. Diffusion control is effective after less than 0.1 s after the beginning of the potential pulse. The phenomena associated with the formation of a coherent film cannot be detected by this technique. Transmission electron microscopy observations of CdSe films with increasing thicknesses show when the diffusion control is effective, a large density of growth steps followed by the formation of epitaxial nuclei which finally coalesce.

Authors:
; ; ;
Publication Date:
Research Org.:
Univ. Pierre et Marie Curie, Paris (FR)
OSTI Identifier:
20080582
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 147; Journal Issue: 5; Other Information: PBD: May 2000; Journal ID: ISSN 0013-4651
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CADMIUM SELENIDES; ELECTRODEPOSITION; INDIUM PHOSPHIDES; GALLIUM ARSENIDES; ELECTRODEPOSITED COATINGS; CRYSTAL GROWTH

Citation Formats

Beaunier, L., Cachet, H., Froment, M., and Maurin, G. Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals. United States: N. p., 2000. Web. doi:10.1149/1.1393443.
Beaunier, L., Cachet, H., Froment, M., & Maurin, G. Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals. United States. doi:10.1149/1.1393443.
Beaunier, L., Cachet, H., Froment, M., and Maurin, G. Mon . "Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals". United States. doi:10.1149/1.1393443.
@article{osti_20080582,
title = {Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals},
author = {Beaunier, L. and Cachet, H. and Froment, M. and Maurin, G.},
abstractNote = {Epitaxial CdSe layers were electrodeposited from aqueous solutions onto InP and GaAs single crystals. The analysis of current transients shows that the growth kinetics corresponds to the Scharifker model assuming a progressive nucleation followed by three-dimensional diffusion-limited growth. Diffusion control is effective after less than 0.1 s after the beginning of the potential pulse. The phenomena associated with the formation of a coherent film cannot be detected by this technique. Transmission electron microscopy observations of CdSe films with increasing thicknesses show when the diffusion control is effective, a large density of growth steps followed by the formation of epitaxial nuclei which finally coalesce.},
doi = {10.1149/1.1393443},
journal = {Journal of the Electrochemical Society},
issn = {0013-4651},
number = 5,
volume = 147,
place = {United States},
year = {2000},
month = {5}
}