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Title: Anisotropy-based crystalline oxide-on-semiconductor material

Abstract

A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane strain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
20080550
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 25 Jul 2000
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; SEMICONDUCTOR DEVICES; SILICON; SEMICONDUCTOR MATERIALS; OXIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; OPTICAL PROPERTIES; MAGNETIC PROPERTIES

Citation Formats

McKee, R A, and Walker, F J. Anisotropy-based crystalline oxide-on-semiconductor material. United States: N. p., 2000. Web.
McKee, R A, & Walker, F J. Anisotropy-based crystalline oxide-on-semiconductor material. United States.
McKee, R A, and Walker, F J. Tue . "Anisotropy-based crystalline oxide-on-semiconductor material". United States.
@article{osti_20080550,
title = {Anisotropy-based crystalline oxide-on-semiconductor material},
author = {McKee, R A and Walker, F J},
abstractNote = {A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane strain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {7}
}