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Title: Experimental and numerical study of the emitter turn-off thyristor (ETO)

Abstract

The emitter turn-off thyristor (ETO) is a new family of high power semiconductor devices that is suitable for megawatt power electronics application. ETO's with voltage and current ratings of 4--6 kV and 1--4 kA, have been developed and demonstrated. And those power levels are the highest in silicon power devices and are comparable to those of the gate turn-off thyristor (GTO). Compared to the conventional GTO, the ETO has much shorter storage time, voltage controlled turn-off capability, and much larger reverse biased safe operation area (RBSOA). Furthermore, ETO's have a forward-biased safe operation area (FBSOA) that enables it to control the turn-on di/dt similar to an insulated gate bipolar transistor (IGBT). These combined advantages make the ETO based power system simpler in terms of dv/dt snubber, di/dt snubber, over current protection, resulting in significant savings in the system cost. This paper presents experimental and numerical results that demonstrate the advantages of the ETO.

Authors:
; ;
Publication Date:
Research Org.:
Virginia Polytechnic Inst. and State Univ., Blacksburg, VA (US)
Sponsoring Org.:
Sandia National Laboratories; Office of Naval Research; National Science Foundation
OSTI Identifier:
20080334
Alternate Identifier(s):
OSTI ID: 20080334
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Power Electronics (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 15; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0885-8993
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION; 33 ADVANCED PROPULSION SYSTEMS; POWER TRANSMISSION; SEMICONDUCTOR SWITCHES; SEMICONDUCTOR RECTIFIERS; HVDC SYSTEMS; ELECTRIC-POWERED VEHICLES

Citation Formats

Li, Y., Huang, A.Q., and Motto, K. Experimental and numerical study of the emitter turn-off thyristor (ETO). United States: N. p., 2000. Web.
Li, Y., Huang, A.Q., & Motto, K. Experimental and numerical study of the emitter turn-off thyristor (ETO). United States.
Li, Y., Huang, A.Q., and Motto, K. Mon . "Experimental and numerical study of the emitter turn-off thyristor (ETO)". United States.
@article{osti_20080334,
title = {Experimental and numerical study of the emitter turn-off thyristor (ETO)},
author = {Li, Y. and Huang, A.Q. and Motto, K.},
abstractNote = {The emitter turn-off thyristor (ETO) is a new family of high power semiconductor devices that is suitable for megawatt power electronics application. ETO's with voltage and current ratings of 4--6 kV and 1--4 kA, have been developed and demonstrated. And those power levels are the highest in silicon power devices and are comparable to those of the gate turn-off thyristor (GTO). Compared to the conventional GTO, the ETO has much shorter storage time, voltage controlled turn-off capability, and much larger reverse biased safe operation area (RBSOA). Furthermore, ETO's have a forward-biased safe operation area (FBSOA) that enables it to control the turn-on di/dt similar to an insulated gate bipolar transistor (IGBT). These combined advantages make the ETO based power system simpler in terms of dv/dt snubber, di/dt snubber, over current protection, resulting in significant savings in the system cost. This paper presents experimental and numerical results that demonstrate the advantages of the ETO.},
doi = {},
journal = {IEEE Transactions on Power Electronics (Institute of Electrical and Electronics Engineers)},
issn = {0885-8993},
number = 3,
volume = 15,
place = {United States},
year = {2000},
month = {5}
}