Gallium Oxide Heterojunction Diodes for 400 degree C High-Temperature Applications

Sohel, Shahadat H.; Kotecha, Ramchandra; Khan, Imran S.; Heinselman, Karen N.; Narumanchi, Sreekant; Tellekamp, M. Brooks; Zakutayev, Andriy

doi:10.1002/pssa.202300535

Gallium Oxide Heterojunction Diodes for 400 degree C High-Temperature Applications

Journal Article · 21 August 2023 · Physica Status Solidi A: Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.202300535· OSTI ID:2007865

Sohel, Shahadat H.; Kotecha, Ramchandra; Khan, Imran S.; Heinselman, Karen N.; ; ;

..beta..-Ga2O3-based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high-temperature operation of these ultrawide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Herein, heterojunction p-NiO/n-..beta..-Ga2O3 diodes fabrication and optimization for high-temperature device applications are reported, demonstrating a current rectification ratio (ION/IOFF) of more than 106 at 410 degrees C. The NiO heterojunction diode can achieve higher turn-on (VON) voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single-crystal ..beta..-Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on ..beta..-Ga2O3 can significantly improve high-temperature electronic device and sensor performance.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Manufacturing Office

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 2007865

Report Number(s):: NREL/JA-5K00-87688; MainId:88463; UUID:2fcb79ab-31ae-412e-b43b-23ef8d82cfb7; MainAdminID:70790

Journal Information:: Physica Status Solidi A: Applications and Materials Science, Vol. 220, Issue 20

Country of Publication:: United States

Language:: English

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