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Title: The kinetics of gallium penetration into aluminum grain boundaries -- In situ TEM observations and atomistic models[Transmission Electron Microscopy]

Abstract

The penetration behavior of gallium into aluminum grain boundaries was compared with Al grain boundary properties estimated from atomistic computer models. Penetration speeds in individual grain boundaries were measured in situ in the transmission electron microscope (TEM), and the observed Al grain boundaries were simulated using the embedded atom method (EAM). Penetration speeds were relatively slow in low angle grain boundaries and most low {Sigma} boundaries; however, for high {Sigma} boundaries, penetration speeds varied widely and were not correlated with rotation angle or coincidence site lattice (CSL) {Sigma} value. Atomistic computer models suggested that the presence of structural barriers in the grain boundary plane was an important factor in determining penetration speeds.

Authors:
;
Publication Date:
Research Org.:
Los Alamos National Lab., NM (US)
Sponsoring Org.:
USDOE
OSTI Identifier:
20075946
DOE Contract Number:  
FG06-87ER45287
Resource Type:
Journal Article
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 48; Journal Issue: 8; Other Information: PBD: 11 May 2000; Journal ID: ISSN 1359-6454
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GRAIN BOUNDARIES; EMBRITTLEMENT; ALUMINIUM; GALLIUM ADDITIONS; COMPUTERIZED SIMULATION; LIQUID METALS; TRANSMISSION ELECTRON MICROSCOPY; KINETICS

Citation Formats

Hugo, R.C., and Hoagland, R.G. The kinetics of gallium penetration into aluminum grain boundaries -- In situ TEM observations and atomistic models[Transmission Electron Microscopy]. United States: N. p., 2000. Web. doi:10.1016/S1359-6454(99)00463-2.
Hugo, R.C., & Hoagland, R.G. The kinetics of gallium penetration into aluminum grain boundaries -- In situ TEM observations and atomistic models[Transmission Electron Microscopy]. United States. doi:10.1016/S1359-6454(99)00463-2.
Hugo, R.C., and Hoagland, R.G. Thu . "The kinetics of gallium penetration into aluminum grain boundaries -- In situ TEM observations and atomistic models[Transmission Electron Microscopy]". United States. doi:10.1016/S1359-6454(99)00463-2.
@article{osti_20075946,
title = {The kinetics of gallium penetration into aluminum grain boundaries -- In situ TEM observations and atomistic models[Transmission Electron Microscopy]},
author = {Hugo, R.C. and Hoagland, R.G.},
abstractNote = {The penetration behavior of gallium into aluminum grain boundaries was compared with Al grain boundary properties estimated from atomistic computer models. Penetration speeds in individual grain boundaries were measured in situ in the transmission electron microscope (TEM), and the observed Al grain boundaries were simulated using the embedded atom method (EAM). Penetration speeds were relatively slow in low angle grain boundaries and most low {Sigma} boundaries; however, for high {Sigma} boundaries, penetration speeds varied widely and were not correlated with rotation angle or coincidence site lattice (CSL) {Sigma} value. Atomistic computer models suggested that the presence of structural barriers in the grain boundary plane was an important factor in determining penetration speeds.},
doi = {10.1016/S1359-6454(99)00463-2},
journal = {Acta Materialia},
issn = {1359-6454},
number = 8,
volume = 48,
place = {United States},
year = {2000},
month = {5}
}