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Title: Thermally-induced voltage alteration for integrated circuit analysis

Abstract

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

Authors:
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
20075850
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 20 Jun 2000
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; LASER RADIATION; DEFECTS; ELECTRICAL FAULTS; SYSTEM FAILURE ANALYSIS; TESTING

Citation Formats

Cole, Jr, E I. Thermally-induced voltage alteration for integrated circuit analysis. United States: N. p., 2000. Web.
Cole, Jr, E I. Thermally-induced voltage alteration for integrated circuit analysis. United States.
Cole, Jr, E I. 2000. "Thermally-induced voltage alteration for integrated circuit analysis". United States.
@article{osti_20075850,
title = {Thermally-induced voltage alteration for integrated circuit analysis},
author = {Cole, Jr, E I},
abstractNote = {A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.},
doi = {},
url = {https://www.osti.gov/biblio/20075850}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}