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Title: Chemical vapor deposition of fluorine-doped zinc oxide

Abstract

Films of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

Authors:
; ;
Publication Date:
Sponsoring Org.:
US Department of Energy
OSTI Identifier:
20075841
Alternate Identifier(s):
OSTI ID: 20075841
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 6 Jun 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ZINC OXIDES; DOPED MATERIALS; FLUORINE OXIDES; CHEMICAL VAPOR DEPOSITION; PRECURSOR; ELECTRIC CONDUCTIVITY; OPTICAL PROPERTIES

Citation Formats

Gordon, R.G., Kramer, K., and Liang, H. Chemical vapor deposition of fluorine-doped zinc oxide. United States: N. p., 2000. Web.
Gordon, R.G., Kramer, K., & Liang, H. Chemical vapor deposition of fluorine-doped zinc oxide. United States.
Gordon, R.G., Kramer, K., and Liang, H. Tue . "Chemical vapor deposition of fluorine-doped zinc oxide". United States.
@article{osti_20075841,
title = {Chemical vapor deposition of fluorine-doped zinc oxide},
author = {Gordon, R.G. and Kramer, K. and Liang, H.},
abstractNote = {Films of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}