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Title: Method of making AlInSb by metal-organic chemical vapor deposition

Abstract

A method is disclosed for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al{sub x}In{sub 1{minus}x}Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525 C to produce Al{sub x}In{sub 1{minus}x}Sb crystalline materials wherein x is greater than 0.002 and less than one.

Authors:
; ;
Publication Date:
Sponsoring Org.:
US Department of Energy
OSTI Identifier:
20075839
Alternate Identifier(s):
OSTI ID: 20075839
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 6 Jun 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONIDES; ALUMINIUM COMPOUNDS; INDIUM ANTIMONIDES; CHEMICAL VAPOR DEPOSITION; CHEMICAL COMPOSITION; SEMICONDUCTOR MATERIALS

Citation Formats

Biefeld, R.M., Allerman, A.A., and Baucom, K.C. Method of making AlInSb by metal-organic chemical vapor deposition. United States: N. p., 2000. Web.
Biefeld, R.M., Allerman, A.A., & Baucom, K.C. Method of making AlInSb by metal-organic chemical vapor deposition. United States.
Biefeld, R.M., Allerman, A.A., and Baucom, K.C. Tue . "Method of making AlInSb by metal-organic chemical vapor deposition". United States.
@article{osti_20075839,
title = {Method of making AlInSb by metal-organic chemical vapor deposition},
author = {Biefeld, R.M. and Allerman, A.A. and Baucom, K.C.},
abstractNote = {A method is disclosed for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al{sub x}In{sub 1{minus}x}Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525 C to produce Al{sub x}In{sub 1{minus}x}Sb crystalline materials wherein x is greater than 0.002 and less than one.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}