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Title: On the behavior of p-n junction solar cells made in fine-grained silicon layers

Abstract

The behavior of polycrystalline p-n-junction solar cells with a grain size in the order of 1 {micro}m is investigated. The diffusion length appears larger than the average grain size at low doping levels but drastically decreases with increasing doping level, with moderate improvement through hydrogenation. The second diode currents are generally very large, leading to poor open-circuit voltages. The authors suggest that the zone of enhanced recombination, usually confined to the junction depletion region, extends into the base where very small grains are completely depleted due to carrier trapping at grain boundaries.

Authors:
; ; ; ;
Publication Date:
Research Org.:
IMEC, Leuven (BE); Katholieke Univ., Leuven (BE)
OSTI Identifier:
20067763
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 47; Journal Issue: 5; Other Information: PBD: May 2000; Journal ID: ISSN 0018-9383
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; P-N JUNCTIONS; SILICON SOLAR CELLS; CHEMICAL VAPOR DEPOSITION; RECOMBINATION; GRAIN SIZE; DEPLETION LAYER

Citation Formats

Beaucarne, G., Poortmans, J., Caymax, M., Nijs, J., and Mertens, R. On the behavior of p-n junction solar cells made in fine-grained silicon layers. United States: N. p., 2000. Web. doi:10.1109/16.841250.
Beaucarne, G., Poortmans, J., Caymax, M., Nijs, J., & Mertens, R. On the behavior of p-n junction solar cells made in fine-grained silicon layers. United States. doi:10.1109/16.841250.
Beaucarne, G., Poortmans, J., Caymax, M., Nijs, J., and Mertens, R. Mon . "On the behavior of p-n junction solar cells made in fine-grained silicon layers". United States. doi:10.1109/16.841250.
@article{osti_20067763,
title = {On the behavior of p-n junction solar cells made in fine-grained silicon layers},
author = {Beaucarne, G. and Poortmans, J. and Caymax, M. and Nijs, J. and Mertens, R.},
abstractNote = {The behavior of polycrystalline p-n-junction solar cells with a grain size in the order of 1 {micro}m is investigated. The diffusion length appears larger than the average grain size at low doping levels but drastically decreases with increasing doping level, with moderate improvement through hydrogenation. The second diode currents are generally very large, leading to poor open-circuit voltages. The authors suggest that the zone of enhanced recombination, usually confined to the junction depletion region, extends into the base where very small grains are completely depleted due to carrier trapping at grain boundaries.},
doi = {10.1109/16.841250},
journal = {IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers)},
issn = {0018-9383},
number = 5,
volume = 47,
place = {United States},
year = {2000},
month = {5}
}