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Title: Numerical modeling of energy balance equations in quantum well Al{sub x}Ga{sub 1{minus}x}As/GaAs p-i-n photodiodes

Abstract

The energy balance equations coupled with drift diffusion transport equations in heterojunction semiconductor devices are solved modeling hot electron effects in single quantum well p-i-n photodiodes. The transports across the heterojunction boundary and through quantum wells are modeled by thermionic emission theory. The simulation and experimental current-voltage characteristics of a single p-i-n GaAs/Al{sub x}Ga{sub 1{minus}x}As quantum well agree over a wide range of current and voltage. The GaAs/Al{sub x}Ga{sub 1{minus}x}As p-i-n structures with multi quantum wells are simulated and the dark current-voltage characteristics, short circuit current, and open circuit voltage results are compared with the available experimental data. In agreement with the experimental data, simulated results show that by adding GaAs quantum wells to the conventional cell made of wider bandgap Al{sub x}Ga{sub 1{minus}x}As, improve short circuit current, but with the loss of the voltage of the host cell. In the limit of radiative recombination, the maximum power point of an Al{sub 0.35}Ga{sub 0.65}As/GaAs p-i-n photodiode with 30-quantum-well periods is higher than the maximum power point of similar conventional bulk p-i-n cells made out of either host Al{sub 0.35}Ga{sub 0.65}As or bulk GaAs material.

Authors:
; ; ;
Publication Date:
Research Org.:
Univ. of Colorado, Denver, CO (US)
OSTI Identifier:
20067761
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 47; Journal Issue: 5; Other Information: PBD: May 2000; Journal ID: ISSN 0018-9383
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 14 SOLAR ENERGY; PHOTODIODES; HETEROJUNCTIONS; CHARGE CARRIERS; SOLAR CELLS; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; CARRIER MOBILITY

Citation Formats

Fardi, H.Z., Winston, D.W., Hayes, R.E., and Hanna, M.C. Numerical modeling of energy balance equations in quantum well Al{sub x}Ga{sub 1{minus}x}As/GaAs p-i-n photodiodes. United States: N. p., 2000. Web. doi:10.1109/16.841221.
Fardi, H.Z., Winston, D.W., Hayes, R.E., & Hanna, M.C. Numerical modeling of energy balance equations in quantum well Al{sub x}Ga{sub 1{minus}x}As/GaAs p-i-n photodiodes. United States. doi:10.1109/16.841221.
Fardi, H.Z., Winston, D.W., Hayes, R.E., and Hanna, M.C. Mon . "Numerical modeling of energy balance equations in quantum well Al{sub x}Ga{sub 1{minus}x}As/GaAs p-i-n photodiodes". United States. doi:10.1109/16.841221.
@article{osti_20067761,
title = {Numerical modeling of energy balance equations in quantum well Al{sub x}Ga{sub 1{minus}x}As/GaAs p-i-n photodiodes},
author = {Fardi, H.Z. and Winston, D.W. and Hayes, R.E. and Hanna, M.C.},
abstractNote = {The energy balance equations coupled with drift diffusion transport equations in heterojunction semiconductor devices are solved modeling hot electron effects in single quantum well p-i-n photodiodes. The transports across the heterojunction boundary and through quantum wells are modeled by thermionic emission theory. The simulation and experimental current-voltage characteristics of a single p-i-n GaAs/Al{sub x}Ga{sub 1{minus}x}As quantum well agree over a wide range of current and voltage. The GaAs/Al{sub x}Ga{sub 1{minus}x}As p-i-n structures with multi quantum wells are simulated and the dark current-voltage characteristics, short circuit current, and open circuit voltage results are compared with the available experimental data. In agreement with the experimental data, simulated results show that by adding GaAs quantum wells to the conventional cell made of wider bandgap Al{sub x}Ga{sub 1{minus}x}As, improve short circuit current, but with the loss of the voltage of the host cell. In the limit of radiative recombination, the maximum power point of an Al{sub 0.35}Ga{sub 0.65}As/GaAs p-i-n photodiode with 30-quantum-well periods is higher than the maximum power point of similar conventional bulk p-i-n cells made out of either host Al{sub 0.35}Ga{sub 0.65}As or bulk GaAs material.},
doi = {10.1109/16.841221},
journal = {IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers)},
issn = {0018-9383},
number = 5,
volume = 47,
place = {United States},
year = {2000},
month = {5}
}