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Title: 25.5% efficient Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells grown on GaAs substrates

Abstract

Theoretical calculations predict a higher power conversion efficiency for the combination of Ga{sub 0.35}In{sub 0.65}P and Ga{sub 0.83}In{sub 0.17}As in a tandem solar cell, compared to the more commonly used Ga{sub 0.51}In{sub 0.49}P/GaAs approach. A record conversion efficiency of 21.6% (AM1.5g) was recently achieved for a 1.18 eV Ga{sub 0.83}In{sub 0.17}As solar cell, grown lattice-mismatched to the GaAs substrate material. This paper reports on the device characteristics of first Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells based on this very promising GaInAs material. A high quantum efficiency, comparable to the lattice-matched Ga{sub 0.51}In{sub 0.49}P on GaAs approach was achieved. A power conversion efficiency of 25.5% was measured under AM1.5d spectral conditions.

Authors:
; ;
Publication Date:
Research Org.:
Fraunhofer Inst. for Solar Energy Systems ISE, Freiburg (DE)
OSTI Identifier:
20067759
Resource Type:
Journal Article
Journal Name:
IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 21; Journal Issue: 5; Other Information: PBD: May 2000; Journal ID: ISSN 0741-3106
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; QUANTUM EFFICIENCY; GALLIUM ARSENIDE SOLAR CELLS; INDIUM ARSENIDES; GALLIUM ARSENIDES; FABRICATION; GALLIUM PHOSPHIDE SOLAR CELLS; INDIUM PHOSPHIDE SOLAR CELLS

Citation Formats

Dimroth, F., Schubert, U., and Bett, A.W. 25.5% efficient Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells grown on GaAs substrates. United States: N. p., 2000. Web. doi:10.1109/55.841298.
Dimroth, F., Schubert, U., & Bett, A.W. 25.5% efficient Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells grown on GaAs substrates. United States. doi:10.1109/55.841298.
Dimroth, F., Schubert, U., and Bett, A.W. Mon . "25.5% efficient Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells grown on GaAs substrates". United States. doi:10.1109/55.841298.
@article{osti_20067759,
title = {25.5% efficient Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells grown on GaAs substrates},
author = {Dimroth, F. and Schubert, U. and Bett, A.W.},
abstractNote = {Theoretical calculations predict a higher power conversion efficiency for the combination of Ga{sub 0.35}In{sub 0.65}P and Ga{sub 0.83}In{sub 0.17}As in a tandem solar cell, compared to the more commonly used Ga{sub 0.51}In{sub 0.49}P/GaAs approach. A record conversion efficiency of 21.6% (AM1.5g) was recently achieved for a 1.18 eV Ga{sub 0.83}In{sub 0.17}As solar cell, grown lattice-mismatched to the GaAs substrate material. This paper reports on the device characteristics of first Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells based on this very promising GaInAs material. A high quantum efficiency, comparable to the lattice-matched Ga{sub 0.51}In{sub 0.49}P on GaAs approach was achieved. A power conversion efficiency of 25.5% was measured under AM1.5d spectral conditions.},
doi = {10.1109/55.841298},
journal = {IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers)},
issn = {0741-3106},
number = 5,
volume = 21,
place = {United States},
year = {2000},
month = {5}
}