Method and apparatus for electron-only radiation detectors from semiconductor materials
A system is disclosed for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and HgI{sub 2}, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20050927
- Resource Relation:
- Other Information: PBD: 30 May 2000
- Country of Publication:
- United States
- Language:
- English
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