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Title: Method and apparatus for electron-only radiation detectors from semiconductor materials

Abstract

A system is disclosed for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and HgI{sub 2}, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
20050927
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 30 May 2000
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ELECTRON DETECTION; AMBIENT TEMPERATURE; SEMICONDUCTOR DETECTORS; CHARGE COLLECTION; CHARGE CARRIERS; ELECTRODES

Citation Formats

NONE. Method and apparatus for electron-only radiation detectors from semiconductor materials. United States: N. p., 2000. Web.
NONE. Method and apparatus for electron-only radiation detectors from semiconductor materials. United States.
NONE. Tue . "Method and apparatus for electron-only radiation detectors from semiconductor materials". United States.
@article{osti_20050927,
title = {Method and apparatus for electron-only radiation detectors from semiconductor materials},
author = {NONE},
abstractNote = {A system is disclosed for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and HgI{sub 2}, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}