Review of ionized-PVD by hollow cathode magnetron sputtering
The Hollow Cathode Magnetron (HCM) is a new type of high density plasma device developed for ionized physical vapor deposition (I-PVD). Unlike other I-PVD approaches where post-ionization of sputtered or evaporated metal atoms by either radiofrequency (rf) or microwave generated high density plasma is necessary, the HCM uses only a single dc power supply to both sputter and ionize the target material. A novel magnetic geometry provides the confining magnetic field to sustain a magnetron discharge within a cup-shaped hollow cathode and the means of ion extraction to allow the metal plasma to stream to the substrate. The HCM can be used for the deposition of a large variety of conductive materials simply by a change of the sputtering target. Pulsed dc or rf can be used for the deposition of non-conductive materials. By use of a mixture of inert and reactive gases such as nitrogen or oxygen, many different kinds of binary compounds can be deposited using reactive sputtering. Because of its extremely high plasma density and sputtering rate, the HCM is capable of maintaining the target surface in the non-poisoned (i.e. the metallic) mode avoiding problems commonly encountered in reactive sputtering. The characteristics of HCM deposited film can be dramatically different from those by conventional PVD. The physics of metal ion deposition under high flux, low energy ion bombardment and its effect on film properties will be discussed.
- Research Organization:
- Novellus Systems, San Jose, CA (US)
- OSTI ID:
- 20034254
- Resource Relation:
- Conference: 1999 IEEE International Conference on Plasma Science, Monterey, CA (US), 06/20/1999--06/24/1999; Other Information: PBD: 1999; Related Information: In: The 26th IEEE international conference on plasma science, 342 pages.
- Country of Publication:
- United States
- Language:
- English
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