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Title: Formation of nanofilament field emission devices

Abstract

A process is disclosed for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50--200 nm, with an aspect ratio of 5--10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
US Department of Energy
OSTI Identifier:
20023232
Alternate Identifier(s):
OSTI ID: 20023232
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 4 Apr 2000
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; FIELD EMISSION; DISPLAY DEVICES; FABRICATION; DIELECTRIC MATERIALS; METALS; MASKING; PLATING

Citation Formats

Morse, J.D., Contolini, R.J., Musket, R.G., and Bernhardt, A.F. Formation of nanofilament field emission devices. United States: N. p., 2000. Web.
Morse, J.D., Contolini, R.J., Musket, R.G., & Bernhardt, A.F. Formation of nanofilament field emission devices. United States.
Morse, J.D., Contolini, R.J., Musket, R.G., and Bernhardt, A.F. Tue . "Formation of nanofilament field emission devices". United States.
@article{osti_20023232,
title = {Formation of nanofilament field emission devices},
author = {Morse, J.D. and Contolini, R.J. and Musket, R.G. and Bernhardt, A.F.},
abstractNote = {A process is disclosed for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50--200 nm, with an aspect ratio of 5--10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {4}
}