Low energy ion beam assisted deposition of TiN thin films on silicon
TiN films and coatings have been widely used in industry with applications ranging from corrosion, wear resistance and decoration coating to diffusion barriers in microelectronic devices. Although several studies have been carried out to understand the effect of process parameters on the structure and properties of TiN films, due to the variation of process parameters with different PVD methods, it is difficult to verify the significance of each specific parameter. The objective of the present study continues to investigate the effect of process parameters (namely, ion incident angle, ion energy, and deposition temperature) on the preferred orientation, resistivity and microstructure of TiN thin films prepared by the IBAD method on Si (100) substrate with the ion energy below 300 Volts.
- Research Organization:
- Univ. of Illinois, Urbana, IL (US)
- Sponsoring Organization:
- USDOE; National Science Council of Republic of China
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 20023183
- Journal Information:
- Scripta Materialia, Vol. 42, Issue 6; Other Information: PBD: Feb 2000; ISSN 1359-6462
- Country of Publication:
- United States
- Language:
- English
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