High magnetoresistance in sputtered permalloy thin films through growth on seed layers of (Ni{sub 0.81}Fe{sub 0.19}){sub 1{minus}x}Cr{sub x}
The use of a thin (Ni{sub 0.81}Fe{sub 0.19}){sub 1{minus}x}Cr{sub x} seed layer for obtaining high anisotropic magnetoresistance in Permalloy (Ni{sub 0.81}Fe{sub 0.19}) films is reported. The process yields a high {Delta} R/R of, for example, 3.2% for 120-{angstrom}-thick NiFe, without high-temperature deposition or annealing. X-ray diffraction shows that the NiFeCr seed layer causes the formation of large (111) textured grains in the Permalloy film, and that the interface between these two layers is quite smooth. These both increase the {Delta} R and reduce the resistance R in the film, which lead to the high {Delta} R/R. Also discussed is the enhanced {Delta} R/R and thermal stability trilayer magnetoresistive sensors using this NiFeCr instead of Ta as a spacer.
- Research Organization:
- IBM Almaden Research Center, San Jose, CA (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 20020855
- Journal Information:
- IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers), Vol. 36, Issue 1Pt2; Other Information: PBD: Jan 2000; ISSN 0018-9464
- Country of Publication:
- United States
- Language:
- English
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