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Title: Method for surface passivation and protection of cadmium zinc telluride crystals

Patent ·
OSTI ID:20015712

A method for reducing the leakage current in CZT crystals, particularly Cd{sub 1{minus}x}Zn{sub x}Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd{sub 0.9}Zn{sub 0.1}Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
20015712
Resource Relation:
Other Information: PBD: 28 Mar 2000
Country of Publication:
United States
Language:
English