The effects of temperature ramping on MOCVD Al film properties[Metal Organic Chemical Vapor Deposition]
The authors present and discuss experiments designed to demonstrate the effects of ramping substrate temperature during the deposition of TIBA sourced aluminum on Si(100) and TiN{sub x} coated silicon (TiN) wafers. They also present results from experiments in which the precursor flow was pulsed (started and stopped) for a short time at a higher temperature followed by temperature ramp down and deposition at a lower (constant) temperature on TiN wafers. Aluminum growth rates and crystal orientation data are presented for different deposition conditions on Si(100) wafers. Aluminum nucleation densities, crystal orientation, average grain size, surface roughness, growth rate and resistivity data are presented for different deposition conditions on TiN wafers. Aluminum nucleation densities, crystal orientation, average grain size, surface roughness, growth rate and resistivity data are presented for different deposition conditions on TiN wafers. During substrate temperature ramp down from 673 K on TiN wafers, when the precursor flow was pulsed for a short time at higher temperatures, and then resumed at a lower (constant) temperature 573 K, there was a significant increase in both deposition rates and fraction of (111) orientation. The resistivities of these films were close to that of bulk aluminum. Films deposited during substrate temperature ramp down on TiN substrates resulted in higher fractions of (111) orientation and higher resistivities as compared to the films deposited a constant substrate temperature and during the ramp up of substrate temperature. The films deposited on Si(100) wafers during substrate temperature ramp down from 673 K to 573 K had strong Al(200) orientation.
- Research Organization:
- Arizona State Univ., Tempe, AZ (US)
- OSTI ID:
- 20015561
- Resource Relation:
- Conference: Polycrystalline thin films - Structure, Texture, Properties and Applications III, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: Single article reprints from this publication are available through University Microfilms Inc., 300 North Zeeb Road, Ann Arbor, MI 48106; PBD: 1997; Related Information: In: Polycrystalline thin films -- Structure, texture, properties and applications III. Materials Research Society symposium proceedings: Volume 472, by Yalisove, S.M.; Adams, B.L.; Im, J.S.; Zhu, Y.; Chen, F.R. [eds.], 489 pages.
- Country of Publication:
- United States
- Language:
- English
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