skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides

Abstract

Radiation enhanced drain induced barrier lowering (DIBL) was experimentally observed and verified by 3-D simulations for submicron devices with trench isolation oxides. Submicron MOSFETs with shallow trench isolation were exposed to total-ionizing-dose radiation. Prior to irradiation, the devices exhibited near-ideal current-voltage characteristics, with no significant short-channel effects for as-drawn gate lengths of 0.4 {micro}m. Following irradiation, the off-state leakage current increased significantly for total doses above about 650 krad(SiO{sub 2}). In addition, the irradiated devices exhibited DIBL that increased the drain current by 5--10x for a gate length of 0.4 {micro}m (the nominal minimum gate length for this process) and much more for slightly shorter devices (0.35 {micro}m). The increase in the off-state leakage current and the accompanying DIBL are shown to be associated with a parasitic field-effect transistor that is present at the edge of the shallow trench. Three-dimensional simulations are used to illustrate the effect. Simulations show that trapped charge at the trench sidewalls enhance the DIBL by depleting the edges of the channel. Radiation-induced charge may decrease the effectiveness of short-channel engineering.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Vanderbilt Univ., Nashville, TN (US)
Sponsoring Org.:
Defense Threat Reduction Agency (DTRA)
OSTI Identifier:
20014748
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 46; Journal Issue: 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; Journal ID: ISSN 0018-9499
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION; PHYSICAL RADIATION EFFECTS; DEPLETION LAYER; MOSFET; IONIZING RADIATIONS; ELECTRICAL PROPERTIES; LEAKAGE CURRENT; THREE-DIMENSIONAL CALCULATIONS

Citation Formats

Youk, G U, Khare, P S, Schrimpf, R D, Massengill, L W, and Galloway, K F. Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides. United States: N. p., 1999. Web. doi:10.1109/23.819161.
Youk, G U, Khare, P S, Schrimpf, R D, Massengill, L W, & Galloway, K F. Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides. United States. doi:10.1109/23.819161.
Youk, G U, Khare, P S, Schrimpf, R D, Massengill, L W, and Galloway, K F. Wed . "Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides". United States. doi:10.1109/23.819161.
@article{osti_20014748,
title = {Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides},
author = {Youk, G U and Khare, P S and Schrimpf, R D and Massengill, L W and Galloway, K F},
abstractNote = {Radiation enhanced drain induced barrier lowering (DIBL) was experimentally observed and verified by 3-D simulations for submicron devices with trench isolation oxides. Submicron MOSFETs with shallow trench isolation were exposed to total-ionizing-dose radiation. Prior to irradiation, the devices exhibited near-ideal current-voltage characteristics, with no significant short-channel effects for as-drawn gate lengths of 0.4 {micro}m. Following irradiation, the off-state leakage current increased significantly for total doses above about 650 krad(SiO{sub 2}). In addition, the irradiated devices exhibited DIBL that increased the drain current by 5--10x for a gate length of 0.4 {micro}m (the nominal minimum gate length for this process) and much more for slightly shorter devices (0.35 {micro}m). The increase in the off-state leakage current and the accompanying DIBL are shown to be associated with a parasitic field-effect transistor that is present at the edge of the shallow trench. Three-dimensional simulations are used to illustrate the effect. Simulations show that trapped charge at the trench sidewalls enhance the DIBL by depleting the edges of the channel. Radiation-induced charge may decrease the effectiveness of short-channel engineering.},
doi = {10.1109/23.819161},
journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)},
issn = {0018-9499},
number = 6Pt1,
volume = 46,
place = {United States},
year = {1999},
month = {12}
}