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Title: Single event upset immunity of strontium bismuth tantalate ferroelectric memories

Abstract

An embedded 1Kbit non-volatile (NV) serial memory manufactured with strontium bismuth tantalate (SBT) ferroelectric (FE) technology was shown to be immune to effects of heavy ion irradiation. The memories did not lose any data in the non-volatile mode when exposed to xenon (maximum effective LET of 128 MeV-cm{sup 2}/mg and a total fluence of 1.5 x 10{sup 7} ions/cm{sup 2}). The ferroelectric memories also did not exhibit any loss in the ability to rewrite new data into the memory bits, indicating that no significant degradation of the FE dipoles occurred as a result of the heavy ion exposure. The fast read/write times of FE memories also means that single event gate rupture is unlikely to occur in this technology.

Authors:
; ;
Publication Date:
Research Org.:
UTMC Microelectronic Systems, Colorado Springs, CO (US)
OSTI Identifier:
20014694
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 46; Journal Issue: 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; Journal ID: ISSN 0018-9499
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION; MEMORY DEVICES; FERROELECTRIC MATERIALS; TANTALATES; STRONTIUM COMPOUNDS; BISMUTH COMPOUNDS; HEAVY IONS; PHYSICAL RADIATION EFFECTS; FAILURES; PERFORMANCE

Citation Formats

Benedetto, J M, Derbenwick, G F, and Cuchiaro, J D. Single event upset immunity of strontium bismuth tantalate ferroelectric memories. United States: N. p., 1999. Web. doi:10.1109/23.819102.
Benedetto, J M, Derbenwick, G F, & Cuchiaro, J D. Single event upset immunity of strontium bismuth tantalate ferroelectric memories. United States. https://doi.org/10.1109/23.819102
Benedetto, J M, Derbenwick, G F, and Cuchiaro, J D. Wed . "Single event upset immunity of strontium bismuth tantalate ferroelectric memories". United States. https://doi.org/10.1109/23.819102.
@article{osti_20014694,
title = {Single event upset immunity of strontium bismuth tantalate ferroelectric memories},
author = {Benedetto, J M and Derbenwick, G F and Cuchiaro, J D},
abstractNote = {An embedded 1Kbit non-volatile (NV) serial memory manufactured with strontium bismuth tantalate (SBT) ferroelectric (FE) technology was shown to be immune to effects of heavy ion irradiation. The memories did not lose any data in the non-volatile mode when exposed to xenon (maximum effective LET of 128 MeV-cm{sup 2}/mg and a total fluence of 1.5 x 10{sup 7} ions/cm{sup 2}). The ferroelectric memories also did not exhibit any loss in the ability to rewrite new data into the memory bits, indicating that no significant degradation of the FE dipoles occurred as a result of the heavy ion exposure. The fast read/write times of FE memories also means that single event gate rupture is unlikely to occur in this technology.},
doi = {10.1109/23.819102},
url = {https://www.osti.gov/biblio/20014694}, journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)},
issn = {0018-9499},
number = 6Pt1,
volume = 46,
place = {United States},
year = {1999},
month = {12}
}