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Title: Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

Abstract

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
20013935
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 8 Feb 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; SEMICONDUCTOR MATERIALS; SUBSTRATES; SEMICONDUCTOR DEVICES; THIN FILMS; EPITAXY; OXIDES; CRYSTAL LATTICES

Citation Formats

McKee, R A, and Walker, F J. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material. United States: N. p., 2000. Web.
McKee, R A, & Walker, F J. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material. United States.
McKee, R A, and Walker, F J. Tue . "Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material". United States.
@article{osti_20013935,
title = {Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material},
author = {McKee, R A and Walker, F J},
abstractNote = {A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {2}
}