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Title: Photoresist composition for extreme ultraviolet lithography

Abstract

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4--0.05 {mu}m using projection lithography and extreme ultraviolet (EUV) radiation is disclosed. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
20013871
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 23 Nov 1999
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 42 ENGINEERING; MICROELECTRONIC CIRCUITS; MANUFACTURING; MASKING; EXTREME ULTRAVIOLET RADIATION; OPTICAL SYSTEMS; SUBSTRATES; LASER RADIATION

Citation Formats

Felter, T E, and Kubiak, G D. Photoresist composition for extreme ultraviolet lithography. United States: N. p., 1999. Web.
Felter, T E, & Kubiak, G D. Photoresist composition for extreme ultraviolet lithography. United States.
Felter, T E, and Kubiak, G D. Tue . "Photoresist composition for extreme ultraviolet lithography". United States.
@article{osti_20013871,
title = {Photoresist composition for extreme ultraviolet lithography},
author = {Felter, T E and Kubiak, G D},
abstractNote = {A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4--0.05 {mu}m using projection lithography and extreme ultraviolet (EUV) radiation is disclosed. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {11}
}