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Title: Cadmium-free junction fabrication process for CuInSe{sub 2} thin film solar cells

Abstract

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
US Department of Energy
OSTI Identifier:
20013812
Alternate Identifier(s):
OSTI ID: 20013812
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 7 Sep 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; MATERIAL SUBSTITUTION; FABRICATION; COPPER SELENIDE SOLAR CELLS; INDIUM SELENIDE SOLAR CELLS; THIN FILMS; CRYSTAL DOPING

Citation Formats

Ramanathan, K.V., Contreras, M.A., Bhattacharya, R.N., Keane, J., and Noufi, R. Cadmium-free junction fabrication process for CuInSe{sub 2} thin film solar cells. United States: N. p., 1999. Web.
Ramanathan, K.V., Contreras, M.A., Bhattacharya, R.N., Keane, J., & Noufi, R. Cadmium-free junction fabrication process for CuInSe{sub 2} thin film solar cells. United States.
Ramanathan, K.V., Contreras, M.A., Bhattacharya, R.N., Keane, J., and Noufi, R. Tue . "Cadmium-free junction fabrication process for CuInSe{sub 2} thin film solar cells". United States.
@article{osti_20013812,
title = {Cadmium-free junction fabrication process for CuInSe{sub 2} thin film solar cells},
author = {Ramanathan, K.V. and Contreras, M.A. and Bhattacharya, R.N. and Keane, J. and Noufi, R.},
abstractNote = {The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}