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Title: Power semiconductor materials and devices

Abstract

Innovative silicon concepts and nonsilicon materials such as SiC, diamond and group-III nitrides are finding interest for new generations of electronic devices operational at much higher voltages and temperatures than conventional lower-power transistors and integrated circuits. Improved bulk and epitaxial growth, processing, device design and circuit architecture, bonding, testing and packaging are all necessary for realization of new applications. It seems clear from the symposium that Si will continue to dominate most power electronics applications for the next decade, while SiC is by far the most mature of the newer materials technologies. The group-III nitrides are also extremely attractive because of their excellent transport properties and the availability of heterostructures. It is likely that hybrid GaN/SiC devices will have a role due to the need for high thermal conductivity substrates for thermal management. Diamond appears to be trailing because of the inability to dope with donor impurities, although in principle, its properties are probably better suited to high-temperature applications than many other materials. Summaries of these topics are provided by invited review papers, while contributed and poster papers describe work in progress. Topics include: new boule growth techniques for ultra-high-purity Si and wide-bandgap materials; CVD and epitaxial techniques for powermore » materials; high-power/high-temperature device structures; advanced wafer-scale thermal management; simulation tools specific to high-power devices; advanced processing techniques; and packaging/testing at high currents/temperatures.« less

Authors:
; ; ; ;  [1]
  1. eds.
Publication Date:
OSTI Identifier:
20013763
Report Number(s):
CONF-971201-
ISBN 1-55899-388-6; TRN: IM200011%%68
Resource Type:
Conference
Resource Relation:
Conference: 1997 Materials Research Society Fall Meeting, Boston, MA (US), 12/01/1997--12/05/1997; Other Information: PBD: 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; SEMICONDUCTOR MATERIALS; PROCEEDINGS; SEMICONDUCTOR DEVICES; SILICON; SILICON CARBIDES; NITRIDES; HETEROJUNCTIONS; DIAMONDS; CRYSTAL GROWTH; FABRICATION

Citation Formats

Pearton, S J, Shul, R J, Wolfgang, E, Ren, F, and Tenconi, S. Power semiconductor materials and devices. United States: N. p., 1997. Web.
Pearton, S J, Shul, R J, Wolfgang, E, Ren, F, & Tenconi, S. Power semiconductor materials and devices. United States.
Pearton, S J, Shul, R J, Wolfgang, E, Ren, F, and Tenconi, S. Tue . "Power semiconductor materials and devices". United States.
@article{osti_20013763,
title = {Power semiconductor materials and devices},
author = {Pearton, S J and Shul, R J and Wolfgang, E and Ren, F and Tenconi, S},
abstractNote = {Innovative silicon concepts and nonsilicon materials such as SiC, diamond and group-III nitrides are finding interest for new generations of electronic devices operational at much higher voltages and temperatures than conventional lower-power transistors and integrated circuits. Improved bulk and epitaxial growth, processing, device design and circuit architecture, bonding, testing and packaging are all necessary for realization of new applications. It seems clear from the symposium that Si will continue to dominate most power electronics applications for the next decade, while SiC is by far the most mature of the newer materials technologies. The group-III nitrides are also extremely attractive because of their excellent transport properties and the availability of heterostructures. It is likely that hybrid GaN/SiC devices will have a role due to the need for high thermal conductivity substrates for thermal management. Diamond appears to be trailing because of the inability to dope with donor impurities, although in principle, its properties are probably better suited to high-temperature applications than many other materials. Summaries of these topics are provided by invited review papers, while contributed and poster papers describe work in progress. Topics include: new boule growth techniques for ultra-high-purity Si and wide-bandgap materials; CVD and epitaxial techniques for power materials; high-power/high-temperature device structures; advanced wafer-scale thermal management; simulation tools specific to high-power devices; advanced processing techniques; and packaging/testing at high currents/temperatures.},
doi = {},
url = {https://www.osti.gov/biblio/20013763}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {7}
}

Conference:
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