Electrical characterization and type conversion in N{sup +} irradiated CdS thin films prepared by chemical bath deposition
Type conversion due to nitrogen ion irradiation in CdS thin films prepared by chemical bath deposition (CBD) is reported. The films were bombarded with various doses of nitrogen ions in the range 10{sup 14}--10{sup 17} ions/cm{sup 2}, at an energy of 130 keV. The electrical conductivity of the films was found to increase with increase in nitrogen ion concentration. The temperature dependence of conductivity showed an activation energy of 0.06 eV, indicating shallow level formation due to implantation. Hot-probe measurements revealed p-type conductivity in implanted samples and n-type conductivity in unirradiated samples. X-ray diffraction results revealed CdS to be the predominant phase even after nitrogen ion irradiation.
- Research Organization:
- Cochin Univ. of Science and Technology (IN)
- OSTI ID:
- 20013380
- Journal Information:
- Materials Research Bulletin, Vol. 34, Issue 10-11; Other Information: PBD: Jul-Aug 1999; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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